Results 161 to 170 of about 1,757,496 (307)

Manipulating Ferroelectricity Without Electrical Bias: A Perspective

Advanced Physics Research, EarlyView.
Alternatives to electrical bias to control ferroelectric polarization are highly desired for the development of ferroelectric‐based applications. The polarizing role of chemically engineered surfaces, the impact of chemical substitution and mechanical pressure, and light‐induced effects on the final polarization state are highlighted in this short ...
Bixin Yan, Valentine Gillioz, Ipek Efe, Morgan Trassin   +3 more
wiley   +1 more source

Emerging Nonvolatile Memory Technologies in the Future of Microelectronics. [PDF]

ACS Omega
Katehi L, Yi SI, Lin YC, Banerjee S, Xia Q, Yang JJ.   +5 more
europepmc   +1 more source

Bioinspired Crossmodal Tactile Sensory Nerve for High‐Accurate Object Recognition

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
An artificial crossmodal sensory neuron system (ACSNS) that combines a complementary memristor with high‐sensitivity pressure–temperature bimodal sensors, which integrate tactile perception, information storage, and neuromorphic computing. With the aid of machine learning, this ACSNS presents an improved accuracy of 96.67% in recognizing temperatures ...
Delu Chen, Yuetong Han, Xiaodong Wang, Wanli Cheng, Jianjie He, Xing Li, Yoshifumi Oshima, Chongxin Shan, Shaobo Cheng   +8 more
wiley   +1 more source

Hydrazine Intercalation into 2D MoTe₂ Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications. [PDF]

Nanomaterials (Basel)
Yuan L, Wu Y, Ou H, Wu D, Ji Y, Qi D, Zhang W.   +6 more
europepmc   +1 more source

Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications

Information &Functional Materials, EarlyView.
Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo, Zheng Wang, Jialin Meng, Tianyu Wang   +3 more
wiley   +1 more source

Bi₂O₂Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance. [PDF]

ACS Nano
Cheng CC, Chien HC, Lee TT, Chen YC, Nguyen HU, Chen SZ, Lin YC, Suenaga K, Shen CH, Chueh YL, Lin YF, Chou MY, Chiu PW.   +12 more
europepmc   +1 more source

Gradual volatile memristor–based artificial neurons with high uniformity for neuromorphic computing

InfoScience, EarlyView.
Schematic of leaky integrate‐and‐fire artificial neurons for MNIST image classification. Abstract Artificial neurons are pivotal for neuromorphic hardware, but the development of compact and uniform devices remains challenging. Conventional volatile memristors suffer from abrupt switching, which hinders spatiotemporal consistency.
Pengtao Li, Guobin Zhang, Zhihao Gong, Zijian Wang, Xuemeng Fan, Qi Luo, Zhejia Zhang, Dawei Gao, Mingkun Xu, Hua Wang, Shuai Zhong, Qing Wan, Yishu Zhang   +12 more
wiley   +1 more source

Flexible BaTiO₃ Ferroelectric Nonvolatile Memory for Neuromorphic Computation. [PDF]

ACS Appl Mater Interfaces
Peng Y, Liu X, Luo G, Zhang F, Sun T, Li H, Cheng Y, Peng Y.   +7 more
europepmc   +1 more source

Optoelectronic synapses based on two‐dimensional transition metal dichalcogenides for neuromorphic applications

InfoScience, EarlyView.
This review first introduces the fundamental concepts of artificial synapses and synaptic plasticity, then discusses the device structures and operation mechanisms of optoelectronic synapses based on two‐dimensional transition metal dichalcogenides, highlights their applications in neuromorphic vision systems and computing, and concludes with key ...
Xiaona Sun, Yifan Hu, Chengbao Jiang, Shengxue Yang   +3 more
wiley   +1 more source

Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators. [PDF]

Nano Lett
Lele AS, Zhang B, Khwa WS, Chang MF.
europepmc   +1 more source