Results 11 to 20 of about 1,757,496 (307)

Skyrmion-mediated nonvolatile ternary memory

Scientific Reports
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems.
Md Mahadi Rajib, Namita Bindal, Ravish Kumar Raj, Brajesh Kumar Kaushik, Jayasimha Atulasimha   +4 more
doaj   +4 more sources

Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell

IEEE Journal of the Electron Devices Society, 2021
We propose a magnetic field-free spin-orbit torque switching scheme based on two orthogonal current pulses, for which deterministic switching is demonstrated via numerical simulations.
R. L. de Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov   +5 more
doaj   +1 more source

Spin and charge drift-diffusion in ultra-scaled MRAM cells

Scientific Reports, 2022
Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers.
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto L. de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +6 more
doaj   +1 more source

Finite Element Approach for the Simulation of Modern MRAM Devices

Micromachines, 2023
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in ...
Simone Fiorentini, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes, Viktor Sverdlov   +7 more
doaj   +1 more source

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

Micromachines, 2023
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek, Nils Petter Jørstad, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

Micromachines, 2021
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

Editorial for the Special Issue on Magnetic and Spin Devices

Micromachines, 2022
As scaling of semiconductor devices displays signs of saturation, the focus of research in microelectronics shifts towards finding new computing paradigms based on novel physical principles [...]
Viktor Sverdlov, Nuttachai Jutong
doaj   +1 more source

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Molecules, 2023
A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie   +8 more
doaj   +1 more source

Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM

IEEE Journal of the Electron Devices Society, 2020
In spin-transfer torque magnetoresistive random access memory, the magnetization dynamics of a free layer is usually assumed to be determined by the torque created via a position-independent current density.
S. Fiorentini, R. L. de Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov   +5 more
doaj   +1 more source

Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Materials Today Advances, 2022
Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide.
Jimin Han, Boyoung Jeong, Yuri Kim, Joonki Suh, Hongsik Jeong, Hyun-Mi Kim, Tae-Sik Yoon   +6 more
doaj   +1 more source