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Editorial for the Special Issue on Magnetic and Spin Devices, Volume II
Micromachines, 2023 Although the miniaturization of metal–oxide–semiconductor field effect transistors (MOSFETs)—the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits—is continuing, numerous ...
Viktor Sverdlov, Seung-Bok Choi
doaj +1 more source
Nature Communications, 2022 Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity.
Junhwan Choi +7 more
semanticscholar +1 more source
Nonvolatile Capacitive Crossbar Array for In‐Memory Computing
Advanced Intelligent Systems, 2022 Conventional resistive crossbar array for in‐memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses transient current and charge transfer is gaining attention
Jae Hur +6 more
semanticscholar +1 more source
Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film [PDF]
, 2020 open access articleIn this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells.
Pantelidis, Christos Christodoulos +1 more
core +1 more source
An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time
Applied Sciences, 2022 Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin +4 more
doaj +1 more source
Observation of Optically Addressable Nonvolatile Memory in VO2 at Room Temperature
Advanced Electronic Materials, 2021 Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room temperature, and
Youngho Jung +6 more
semanticscholar +1 more source
Recent advances in metal nanoparticle‐based floating gate memory
Nano Select, 2021 Nonvolatile memory is distinguished for the application in many electronic products due to its excellent charge storage ability. Nevertheless, as the device dimensions are scaled down, floating gate memory encounters various challenges: the increasing ...
Hongye Chen, Ye Zhou, Su‐Ting Han
doaj +1 more source
The Shuttle Nanoelectromechanical Nonvolatile Memory [PDF]
IEEE Transactions on Electron Devices, 2012 Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable ...
Pott, Vincent +4 more
openaire +2 more sources
Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories. [PDF]
, 2015 We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary ...
Bröms, Per +10 more
core +2 more sources
Challenges and Applications of Emerging Nonvolatile Memory Devices
Electronics, 2020 Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS).
W. Banerjee
semanticscholar +1 more source