Results 41 to 50 of about 1,757,496 (307)

Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

npj 2D Materials and Applications, 2021
The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications.
Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Elad Koren   +3 more
doaj   +1 more source

A nonvolatile analog programmable voltage source using the VIPMOS EEPROM structure [PDF]

, 1993
A programmable voltage source using the vertical injection punchthrough based MOS (VIPMOS) EEPROM structure is presented. The circuit operates at a single 5-V supply and the output voltage is continuously available even during programming.
Hoen, Klaas, Hoen, Klaas, van Steenwijk, Gijs, van Steenwijk, Gijs, Wallinga, Hans   +4 more
core   +2 more sources

Nonvolatile memories

, 2018
The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic random access memory), which have been so far fulfilled by CMOS-charge storage-based circuits, approaching their fundamental limits,
Rocha, Leandro S.R., Simões, Alexandre Z., Cortés, Johan A., Ramirez, Miguel A., Moura, Francisco, Foschini, Cesar R., Tararam, Ronald, Cilense, Mario, Longo, Elson, Paiva-Santos, Carlos O.   +9 more
openaire   +2 more sources

A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe₂O₃ Nanowire Arrays

Molecules, 2023
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction.
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie   +11 more
doaj   +1 more source

High-Temperature Ferroelectric Behavior of Al_0.7Sc_0.3N

Micromachines, 2022
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the
Daniel Drury, Keisuke Yazawa, Andriy Zakutayev, Brendan Hanrahan, Geoff Brennecka   +4 more
doaj   +1 more source

Nonvolatile dynamic memories [PDF]

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004
This paper demonstrates that electronically passivated Si-SiO/sub 2/ interface enables the development of nonvolatile dynamic memories. Experimental results on charge-retention times are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into SiC.
openaire   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

A Memristor as Multi-Bit Memory: Feasibility Analysis [PDF]

, 2015
The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies.
Bass, O., Fish, A., Naveh, D.
core   +2 more sources

Nonvolatile memory with molecule-engineered tunneling barriers

, 2008
We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion.
Baik S. J., Daniel J. Ruebusch, Edwin C. Kan, Hassan Raza, Kamran Afshari, Lee C., Lue H.-T., Ohba R., Ohba R., Pon H., Tuo-Hung Hou   +10 more
core   +1 more source

Simultaneous electric and magnetic field induced nonvolatile memory

, 2005
We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence.
Levy, P., Leyva, A. G., Quintero, M.
core   +1 more source