Results 51 to 60 of about 1,757,496 (307)

Charge Trap Memory Based on Few-Layered Black Phosphorus

open access: yes, 2015
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications in flexible ...
Feng, Qi   +3 more
core   +1 more source

Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons

open access: yesLight: Science & Applications, 2022
Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices.
Tong Ye   +6 more
doaj   +1 more source

A Reliable and Energy-Efficient Nonvolatile Ternary Memory Based on Hybrid FinFET/RRAM Technology

open access: yesIEEE Access, 2022
With the successful development of information technology, particularly in big data and neural network scopes, the appetency for denser memory compositions has exponentially outreached.
Aram Yousefi   +2 more
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling

open access: yesScientific Reports
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad   +4 more
doaj   +1 more source

Floating-Gate MOS Synapse Transistors [PDF]

open access: yes, 1998
Our goal is to develop silicon learning systems. One impediment to achieving this goal has been the lack of a simple circuit element combining nonvolatile analog memory storage with locally computed memory updates.
Diorio, Chris   +3 more
core  

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

open access: yesAdvanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee   +5 more
wiley   +1 more source

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

open access: yesAdvanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won   +3 more
wiley   +1 more source

Editorial for the Topic on Magnetic Materials and Devices

open access: yesMicromachines
Magnets are materials that are characterized by their own persistent magnetic moments [...]
Viktor Sverdlov
doaj   +1 more source

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

open access: yesJournal of Materiomics, 2018
We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu   +9 more
doaj   +1 more source

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