Results 71 to 80 of about 1,757,496 (307)

Terahertz radiation by ultrafast spontaneous polarization modulation in multiferroic BiFeO$_3$ thin films

, 2005
Terahertz (THz) radiation has been observed from multiferroic BiFeO$_3$ thin films via ultrafast modulation of spontaneous polarization upon carrier excitation with illumination of femtosecond laser pulses.
Kida, Noriaki, Takahashi, Kouhei, Tonouchi, Masayoshi   +2 more
core   +1 more source

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices. [PDF]

, 2016
The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade.
Ahn, Geun Ho, Chung, Seungjun, Jang, Jingon, Javey, Ali, Jeong, Heejun, Jeong, Hyunhak, Kim, Tae-Young, Lee, Takhee, Song, Younggul, Yoo, Daekyoung   +9 more
core   +1 more source

Trap-Assisted Charge Storage in Titania Nanocrystals toward Optoelectronic Nonvolatile Memory.

Nano letters (Print), 2020
Transistor-based memories are of particular significance in the pursuit of next-generation nonvolatile memories. The charge storage medium in a transistor-based memory is pivotal to the device performance.
Zhenhua Sun, Jinhua Li, Chenmin Liu, Shihe Yang, Feng Yan   +4 more
semanticscholar   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

, 2009
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu, Guo, Hongxuan, Guo, Kang, Li, Kui, Liu, Zhiguo, Xia, Yidong, Xu, Bo, Yin, Jiang   +7 more
core   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

Advanced Science, 2022
Analog arithmetic operations are the most fundamental mathematical operations used in image and signal processing as well as artificial intelligence (AI).  In‐memory computing (IMC) offers a high performance and energy‐efficient computing paradigm.
Ruofan Li, Min Song, Zhe Guo, Shihao Li, Wei Duan, Shuai Zhang, Yufeng Tian, Zhenjiang Chen, Yi Bao, Jinsong Cui, Yan Xu, Yaoyuan Wang, Wei Tong, Zhe Yuan, Yan Cui, Li Xi, Dan Feng, Xiaofei Yang, Xuecheng Zou, Jeongmin Hong, Long You   +20 more
doaj   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source

Nonvolatile storage in photorefractive crystals [PDF]

, 1994
We propose and demonstrate a nonvolatile holographic recording system for storing two-dimensional images. The readout light in this system is not absorbed by the holographic medium, and the data are preformatted or postformatted so that lines from ...
Li, Hsin-Yu Sidney, Mok, Fai, Psaltis, Demetri   +2 more
core  

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

, 2008
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A., G. Giusi, G. Iannaccone, Hagenbeck R., Han Z., Lin H., Lombardo S., Ohkura Y., Pang H., Razafmdramora J., U. Ravaioli, Vianello E., Yih C. M.   +12 more
core   +1 more source