Results 221 to 230 of about 368,571 (256)

Normally-off operation power AlGaN/GaN HFET

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
We report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs). The AlGaN/AlN/GaN heterostructure on Si (111) substrate was grown using a metalorganic chemical vapor deposition (MOCVD). The HFET for a normally-off operation was fabricated using the AlGaN/ C-GaN heterostructure.
null Ikeda, null Jiang Li, null Yoshida
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Normally-off GaAs BMFET with heterojunction emitter

Microelectronic Engineering, 1992
Further improvements to the characteristics of vertical JFET's operated in the bipolar mode (BMFET's) can be obtained when electrons entering the channel from the source are accelerated and holes in the channel are blocked from entering into the source. This is achieved by a heterojunction between highly doped source region and lowly doped channel. The
G. Schweeger, H.L. Hartnagel
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(Invited) High Power Normally-Off GaN MOSFET

ECS Transactions, 2011
The enhancement mode n-channel GaN-based MOSFETs on Si substrates have been demonstrated. We achieved a low interface state density between SiO2 and GaN, a high breakdown field, and a high reliability of SiO2 by annealing after SiO2 deposition on GaN. The SiO2 was applied for the gate oxide of GaN MOSFET.
Hiroshi Kambayashi, Yoshihiro Satoh, Takuya Kokawa, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi   +8 more
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RRAM-based FPGA for "normally off, instantly on" applications

Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, 2012
"Normally off, instantly on" applications are becoming common in our environment. They range from healthcare to video surveillance. As the number of applications and their associated performance requirements grow rapidly, more and more powerful, flexible and power efficient computing units are necessary.
Turkyilmaz, Ogun, Onkaraiah, Santhosh, Reyboz, Marina, Clermidy, Fabien, Hraziia, H., Anghel, Costin, Portal, Jean-Michel, Bocquet, Marc   +7 more
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RECESSED-GATE NORMALLY-OFFGaNMOSFET TECHNOLOGIES

International Journal of High Speed Electronics and Systems, 2012
We have fabricated and investigated several types of GaN MOSFETs with normally-off operation. The recessed-gate GaN MOSFET is preferred for normally-off operation, because the threshold voltage (Vth) of the device can be easily controlled, but it suffers from relatively modest current drivability which must be improved by adopting appropriate device ...
KI-SIK IM, KI-WON KIM, DONG-SEOK KIM, HEE-SUNG KANG, DO-KYWN KIM, SUNG-JAE CHANG, YOUNG-HO BAE, SUNG-HO HAHM, SORIN CRISTOLOVEANU, JUNG-HEE LEE   +9 more
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Unclamped repetitive stress on 1200V normally-off SiC JFETs

Microelectronics Reliability, 2012
Abstract An experimental characterization of new-generation normally-off vertical channel 1200 V SiC JFETs under unclamped repetitive stress (URS) is presented. The drain and gate leakage currents are monitored, and their time evolution is recorded. The degradation of the leakage characteristics has been compared with repeated short circuits tests ...
ABBATE, Carmine, BUSATTO, Giovanni, IANNUZZO, Francesco   +2 more
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High Performance Normally-Off GaN Mosfets On Si Substrates

ECS Meeting Abstracts, 2013
Abstract not Available.
Hiroshi Kambayashi, Nariaki Ikeda, Takehiko Nomura, Hirokazu Ueda, Y. Morozumi, Katsushige Harada, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi   +9 more
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Normally‐off AlGaN/GaN power tunnel‐junction FETs

physica status solidi c, 2012
AbstractWe present normally‐off AlGaN/Gan power tunnel‐junction FETs (TJ‐FETs) with high breakdown voltage, low off‐state leakage current and low specific on‐resistance. The TJ‐FETs exhibit normally‐off operation in an otherwise normally‐on as‐grown sample owing to a current controlling scheme different from the conventional FETs. The high 2DEG density
Hongwei Chen, Li Yuan, Qi Zhou, Chunhua Zhou, Kevin J. Chen   +4 more
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Low leakage normally-off tri-gate GaN MISFET

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-state drain leakage current of 0.6 µA/mm at a breakdown voltage of 565 V while maintains a low on ...
Bin Lu, Elison Matioli, Tomas Palacios
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Spintronic normally-off heterogeneous system-on-chip design

2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2018
One of the major challenges in device down-scaling is the increase in the leakage power, which becomes a major component in the overall system power consumption. One way to deal with this problem is to introduce the concept of normally-off instant-on computing architectures, in which the system components are powered off when they are not active.
Gebregiorgis, A., Bishnoi, R., Tahoori, M. B.   +2 more
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