Results 251 to 260 of about 1,694,370 (293)

Implementation of normally-off function for TOPPERS/ASP kernel

2013 IEEE 2nd Global Conference on Consumer Electronics (GCCE), 2013
This paper proposes a normally-off embedded system. The idea behind this system is it turns the power off when the system is idle. Volatile devices, however, cannot maintain their own internal information when they are powered off. So, we use non-volatile RAM (NVRAM) to save the internal information.
Yuma Arakawa, Takeshi Nagasaki, Masashi Toda, Keiji Hirata 0001, Hitoshi Matsubara   +4 more
openaire   +1 more source

Nanofabrication of normally-off GaN vertical nanowire MESFETs

Nanotechnology, 2019
Abstract Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a Schottky barrier gate (V-NW MESFETs), were fabricated for the
G Doundoulakis, A Adikimenakis, A Stavrinidis, K Tsagaraki, M Androulidaki, F Iacovella, G Deligeorgis, G Konstantinidis, A Georgakilas   +8 more
openaire   +2 more sources

Spintronic normally-off heterogeneous system-on-chip design

2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2018
One of the major challenges in device down-scaling is the increase in the leakage power, which becomes a major component in the overall system power consumption. One way to deal with this problem is to introduce the concept of normally-off instant-on computing architectures, in which the system components are powered off when they are not active.
Gebregiorgis, A., Bishnoi, R., Tahoori, M. B.   +2 more
openaire   +2 more sources

High-voltage bipolar mode JFET with normally off characteristics

IEEE Electron Device Letters, 1985
The first realization of a power vertical JFET operated in the bipolar mode (BJFET) with normally off behavior is reported. The structure combines minority carrier injection from the gate region in the on-state, and lateral pinch-off of the channel, due to the built-in voltage, in the off-state.
BELLONE, Salvatore, ANTONIO CARUSO, PAOLO SPIRITO, G. F. VITALE, GIOVANNI BUSATTO, GIUSEPPE COCORULLO, G. FERLA, S. MUSUMECI   +7 more
openaire   +4 more sources

AlN/GaN heterostructures for normally-off transistors

Semiconductors, 2017
The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed.
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin   +10 more
openaire   +1 more source

Technologies for normally-off GaN HEMTs

2020
This chapter reviews the current technologies for normally-off GaN-based HEMTs. First, the HEMT "cascode" approach is briefly described, highlighting advantages and limitation of this design.Then, after illustrating the recessed gate HEMT and the fluorinate gate approach, the focus is put on the recessed gate hybrid metal insulator semiconductor high ...
Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Fabrizio Roccaforte   +3 more
openaire   +1 more source

GaAs Integrated Logic with Normally-Off MESFETs

Extended Abstracts of the 1978 International Conference on Solid State Devices and Materials, 1978
The normally-off GaAs MESFET digital integrated circuits which feature power dissipation as low as 0.2 mW per gate and sub-nanosecond delay time have been developed. To investigate the power-speed performance of the ICs, ring oscillators with different fan-in/fan-out have been fabricated. For fan-in/fan-out = 1/1 , a propagation delay time is typically
Katsuhiko Suyama, Hirotsugu Kusakawa, Masumi Fukuta   +2 more
openaire   +1 more source

Technologies for Realizing Normally-Off Computing

2017
Normally-off computing relies on device technologies, architectural and activity management technologies. To realize normally-off computing systems, details of each technology should be studied. Device technologies provide component that has as small BET as possible by minimizing energy overhead. Architectural technologies combined several devices that
Takashi Nakada, Shinobu Fujita, Masanori Hayashikoshi, Yoshikazu Fujimori, Hiroshi Nakamura   +4 more
openaire   +1 more source

Normally-off GaN MOSFETs on insulating substrate

Solid-State Electronics, 2013
Abstract Several types of GaN MOSFETs with normally-off operation have been fabricated on insulating substrate and evaluated. In recessed-gate GaN MOSFET, the threshold voltage ( V th ) can be easily controlled, but the current drivability is modest and needs to be improved by adopting appropriate device structure and/or process.
Dong-Seok Kim, Ki-Sik Im, Ki-Won Kim, Hee-Sung Kang, Do-Kywn Kim, Sung-Jae Chang, Youngho Bae, Sung-Ho Hahm, Sorin Cristoloveanu, Jung-Hee Lee   +9 more
openaire   +2 more sources

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

2020 Device Research Conference (DRC), 2020
GaN-based HEMTs feature a lot of superior material properties, including high electron mobility, wide band-gap, and large breakdown field. These properties are very suitable for power electronic applications. However, due to the high two dimensional electron gas (2DEG) density, a conventional GaN HEMT is an inherently normally-on device.
Yi-Ping Huang, Ching-Sung Lee, Wei-Chou Hsu   +2 more
openaire   +1 more source