Results 261 to 270 of about 1,694,370 (293)

Modeling of GaN-Based Normally-Off FinFET

IEEE Electron Device Letters, 2014
In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear ...
Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chenming Hu   +5 more
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Normally-off GaAs BMFET with heterojunction emitter

Microelectronic Engineering, 1992
Further improvements to the characteristics of vertical JFET's operated in the bipolar mode (BMFET's) can be obtained when electrons entering the channel from the source are accelerated and holes in the channel are blocked from entering into the source. This is achieved by a heterojunction between highly doped source region and lowly doped channel. The
G. Schweeger, H.L. Hartnagel
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Normally-off MCU architecture for low-power sensor node

2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC), 2014
Sensor nodes are used extensively in order to gather real-time information in the social environment and natural environment. And the production volume of sensor nodes is much increased with the development of cyber-physical systems. Therefore, it becomes important how to reduce the power consumption of huge sensor nodes.
Masanori Hayashikoshi, Yohei Sato, Hiroshi Ueki, Hiroyuki Kawai, Toru Shimizu   +4 more
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High Performance Normally-Off GaN Mosfets On Si Substrates

ECS Meeting Abstracts, 2013
Abstract not Available.
Hiroshi Kambayashi, Nariaki Ikeda, Takehiko Nomura, Hirokazu Ueda, Y. Morozumi, Katsushige Harada, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi   +9 more
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Sporadic Decision-Centric Data Scheduling with Normally-off Sensors

2016 IEEE Real-Time Systems Symposium (RTSS), 2016
The Internet of Things heralds a new generation of data-centric applications, where controllers connect to large numbers of heterogeneous sensing devices. We consider a model, where the control loop does not execute periodically. Instead, controllers are prompted by contextual cues to make one-off decisions, resulting in sporadic activations. Since the
Jung-Eun Kim, Tarek F. Abdelzaher, Lui Sha, Amotz Bar-Noy, Reginald L. Hobbs   +4 more
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30.9 Normally-off computing with crystalline InGaZnO-based FPGA

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014
An FPGA employing c-axis aligned crystal In-Ga-Zn oxide (CAAC-IGZO) FET [1] based configuration memories (CMs) is known to need no reconfiguration thanks to nonvolatile CMs, shows high operation speed due to boosting effect of pass gates used in routing switches (RS) [2], and easily realizes fine-grained multi-context (FG-MC) architecture [2] because ...
Takeshi Aoki, Yuki Okamoto, Takashi Nakagawa, Masataka Ikeda, Munehiro Kozuma, Takeshi Osada, Yoshiyuki Kurokawa, Takayuki Ikeda, Naoto Yamade, Yutaka Okazaki, Hidekazu Miyairi, Masahiro Fujita, Jun Koyama, Shunpei Yamazaki   +13 more
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Unclamped repetitive stress on 1200V normally-off SiC JFETs

Microelectronics Reliability, 2012
Abstract An experimental characterization of new-generation normally-off vertical channel 1200 V SiC JFETs under unclamped repetitive stress (URS) is presented. The drain and gate leakage currents are monitored, and their time evolution is recorded. The degradation of the leakage characteristics has been compared with repeated short circuits tests ...
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo   +2 more
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GaN MOSFETs with Large Current and Normally-off Operation

ECS Meeting Abstracts, 2008
Abstract not Available.
Yuki Niiyama, Hiroshi Kambayashi, Shinya Ootomo, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato   +5 more
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Nonpolar AlGaN/GaN HFETs with a normally off operation

Semiconductor Science and Technology, 2012
Nonpolar AlGaN/GaN heterojunction field-effect transistors (HFETs) with a normally off operation have been demonstrated. The nonpolar (1–120) a-plane's epitaxial layers are grown on (1–102) r-plane sapphire substrates by metal organic chemical vapour deposition.
M Ishida, M Kuroda, T Ueda, T Tanaka
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Normalizing Off-Label Experiments and the Pharmaceuticalization of Homebirths in Pakistan

Ethnos, 2013
AbstractThe off-label use of the drug misoprostol has effectively turned homebirths in ‘resource-poor’ nations into unmarked and un-enunciated zones of experimentation. Misoprostol has become the public health solution in response to medico-humanitarian discourses that construct homebirths as responsible for high maternal mortality.
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