Advanced Materials Interfaces, 2023 The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology.
Bhishma Pandit +10 more
doaj +2 more sources
High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application. [PDF]
Micromachines (Basel), 2022 A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl3/SF6 inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a p-GaN etch rate of 3.4 nm/min was ...
Zhang P +10 more
europepmc +2 more sources
Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs [PDF]
Micromachines, 2022 This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang +5 more
doaj +2 more sources
High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization [PDF]
Fundamental ResearchImproving the hole concentration in p-GaN specimens has posed a major challenge due to the high activation energy of Mg doping in GaN. Recently, a delta doping technique for modulating the valence band and increasing the Mg ionization efficiency in GaN ...
Tao Zhang +8 more
doaj +2 more sources
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]
Micromachines (Basel), 2021 We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Wang J +5 more
europepmc +6 more sources
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
IEEE Journal of the Electron Devices Society, 2020 Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN ...
Xinke Liu +8 more
doaj +2 more sources
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode [PDF]
Micromachines, 2021 In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or
Tae-Hyeon Kim +3 more
doaj +2 more sources
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate [PDF]
MicromachinesThis work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han +9 more
doaj +2 more sources
p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications [PDF]
Scientific ReportsThe continuous evolution of high-power and high-frequency electronic devices demands advanced semiconductor technologies. The proposed GaN p-FET device architecture incorporates a p-GaN source region that enables the simultaneous formation of two ...
Mohit Kumar +5 more
doaj +2 more sources
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs [PDF]
Applied Physics Letters, 2022 In this work, threshold voltage instability of normally off p-GaN high electron mobility transistors has been investigated by monitoring the gate current density during a device on-state.
G. Greco +8 more
semanticscholar +1 more source