Results 91 to 100 of about 21,020,521 (317)

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

open access: yes, 2015
Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices.
Amirthapandian, S.   +5 more
core   +2 more sources

Information Transmission Strategies for Self‐Organized Robotic Aggregation

open access: yesAdvanced Robotics Research, EarlyView.
In this review, we discuss how information transmission influences the neighbor‐based self‐organized aggregation of swarm robots. We focus specifically on local interactions regarding information transfer and categorize previous studies based on the functions of the information exchanged.
Shu Leng   +5 more
wiley   +1 more source

A New Vertical p-GaN Island Double-Trench MOSFET with High Voltage Resistance and Low Leakage

open access: yesMedžiagotyra
Due to the higher breakdown voltage (VDSmax) and anticipated improved reliability, vertical gallium nitride (GaN) metal-oxide-semiconductor field-effect transistors (MOSFETs) are a focal point in next-generation power device research.
Ming DU   +6 more
doaj   +1 more source

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

open access: yes, 2018
The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into
Albadri, Abdulrahman   +9 more
core   +1 more source

Nonlocomotory Robotic Strategies for Dynamic Rotation Control in Terrestrial Robots: A Review

open access: yesAdvanced Robotics Research, EarlyView.
Terrestrial robots increasingly require rapid body rotation to maintain stability and agility in complex environments. This review shows nonlocomotory rotational control strategies that operate without ground contact, including reaction wheels, tails, bars, limbs, and thrusters.
Y. Liang   +14 more
wiley   +1 more source

Early Radiation Therapy Response Assessment Using Multi‐Scale Photoacoustic Imaging

open access: yesAdvanced Science, EarlyView.
Tomographic and mesoscopic photoacoustics capture intratumoural features of radioresistance and response. ABSTRACT There is a critical unmet clinical need to identify biomarkers that predict and detect radiation therapy (RT) response in cancer. Using the unique capabilities of multi‐scale photoacoustic imaging (PAI) to depict tumor oxygenation and ...
Thierry L. Lefebvre   +12 more
wiley   +1 more source

Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

open access: yesInternational Journal of Photoenergy, 2014
We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized ...
Aniruddha Singh Kushwaha   +2 more
doaj   +1 more source

Homoisoflavanone Delays Colorectal Cancer Progression via DNA Damage‐Induced Mitochondrial Apoptosis and Parthanatos‐Like Cell Death

open access: yesAdvanced Science, EarlyView.
Homoisoflavanone (HIF), a bioactive compound isolated from Polygonatum kingianum, selectively suppresses colorectal cancer progression by inducing DNA damage‐mediated mitochondrial apoptosis and parthanatos‐like cell death. HIF triggers mitochondrial dysfunction, including depolarized membrane potential, elevated ROS, and ATP depletion, while impairing
Hongjie Fan   +12 more
wiley   +1 more source

Surface Properties of p‐GaN and Formation of Nickel Metal Contacts

open access: yesAdvanced Materials Interfaces
Nickel (Ni) is the key component in ohmic contacts for Mg‐doped p‐GaN, but the detailed formation mechanisms of the ohmic contact have not yet been understood.
Mikko Miettinen   +12 more
doaj   +1 more source

Performance analysis of serial and shunt microwave switches designed with p-i-n diodes of different semiconductor materials

open access: yesRevista Facultad de Ingeniería Universidad de Antioquia, 2013
A performance analysis of serial and shunt microwave switches based on p-i-n diodes of different semiconductor materials is presented. The materials analyzed are Si, GaAs, SiC, GaN, InP and GaSb. The serial type microwave switch designed with GaSb, GaAs,
Gabriela Leija Hernández   +2 more
doaj   +1 more source

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