Results 11 to 20 of about 21,020,521 (317)
Study on eye movement characteristics and intervention of basketball shooting skill [PDF]
Background The shooting aiming point is very important in basketball because it may affect the field goal percentage (FG%). The purpose of this study was to explore the influence of shooting aiming point practice on FG% and to search for new training ...
Qifeng Gou, Sunnan Li, Runping Wang
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Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. However,
Kwang Jae Lee +7 more
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Biological diversity and conservation of forest ecosystems in Kyrgyzstan [PDF]
Kyrgyzstan is a natural repository of genetic resources and the diversity of species and natural laboratory, where at the small area are represented almost all altitudinal belts, ranging from semi-desert, ending with glacial-nival belt.
Sh. B. Bikirov +5 more
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A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K.
An Yang +13 more
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The results of introduction of Scots pine Pinus sylvestris L. in Northen Kyrgyzstan [PDF]
The forests of Northern Kyrgyzstan are distinguished by poor species composition. Severe forest growing conditions, dry climate, vertical zoning, exposition of forests to the northern slopes, while the opposite slopes are treeless created a more or less ...
A. V. Ivanov
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Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
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Zirconium Mediated Hydrogen Outdiffusion From p-GaN [PDF]
We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance.
E. Kaminska +8 more
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A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang +5 more
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The Structural and Optical Investigation of Grown GaN Film on Porous Silicon Substrate Prepared by PLD [PDF]
The optical properties of a grown gallium nitride (GaN) thin film on a porous silicon (P-Si) substrate was investigated. A Photo-electrochemical etching method was used to synthesize the Psi substrate, and a physical deposition method (pulsed laser ...
Haneen Jabar +3 more
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Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min).
Guangnan Zhou +7 more
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