Results 21 to 30 of about 21,020,521 (317)

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies, 2021
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher   +11 more
doaj   +1 more source

High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion

Crystals, 2023
We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CAVET ...
Xinyi Wen, Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Srabanti Chowdhury   +4 more
doaj   +1 more source

Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors

Nantong Daxue xuebao. Ziran kexue ban, 2021
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve
GE Mei; LI Yi; WANG Zhiliang; ZHU Youhua
doaj   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Optics Express, 2013
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN.
Zhang, Z.-H., Tan, S.T., Liu W., Ju, Z., Zheng, K., Kyaw, Z., Ji, Y., Hasanov, N., Sun X.W., Demir, H. V.   +9 more
openaire   +5 more sources

Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy [PDF]

, 2011
Cataloged from PDF version of article.Transient surface photovoltage (SPV) of n and p-GaN was measured using x-ray photoelectron spectroscopy (XPS) with a time resolution of 0.1 s. The measured SPV transients for both n- and p-GaN are
Aktas, O., Ozbay, E., Sezen, H., Suzer, S.   +3 more
core   +1 more source

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

Optics Express, 2013
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Zhang, Zi-Hui, Tan, Swee Tiam, Liu, Wei, Ju, Zhengang, Zheng, Ke, Kyaw, Zabu, Ji, Yun, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan   +9 more
openaire   +2 more sources

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias [PDF]

, 2011
ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were ...
Chen, X, Djurišić, AB, Fang, F, Fei Lui, H, Gwo, S, Hang Ng, Y, Kin Chan, W, Lam Tam, H, Man Ching Ng, A, Surya, C, Wai Cheah, K, Wai Keung Fong, P   +11 more
core   +1 more source

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals, 2023
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano   +8 more
doaj   +1 more source

SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs

International Electron Devices Meeting, 2021
GaN-based complementary logic (CL) integrated circuits (ICs) for the prospective power integration have been demonstrated on the commercial p-GaN gate power HEMT (high-electron-mobility transistor) platform.
Li Zhang, Zheyang Zheng, Yan Cheng, Y. H. Ng, S. Feng, Wenjie Song, Tao Chen, K. J. Chen   +7 more
semanticscholar   +1 more source

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells [PDF]

, 2010
We demonstrate enhanced external quantum efficiency and current-voltage characteristics due to scattering by 100 nm silver nanoparticles in a single 2.5 nm thick InGaN quantum well photovoltaic device.
Atwater, Harry A., Fischer, Arthur J., Koleske, Daniel D., Pryce, Imogen M.   +3 more
core   +1 more source