Results 31 to 40 of about 21,020,521 (317)

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

Ohmic Contacts on p‐GaN

Advanced Electronic Materials, 2015
With the development of GaN‐based optoelectronic devices, the need for p‐GaN contacts with low resistivity, good thermal stability, and high transparency or reflectivity has become more pressing. Various contact schemes to satisfy these requirements have been investigated in the past two decades.
Jingli Chen, William D. Brewer
openaire   +1 more source

NIIN As an Ohmic Contact to P-GAN [PDF]

MRS Proceedings, 1998
AbstractBased on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound Niln as a possible ohmic contact. The contacts were fabricated by depositing Niln on p-GaN films (p ∼ 2 × 1017 cm-3) using RF sputtering from a compound target.
D. B. Ingerly, Y. A. Chang, Y. Chen
openaire   +1 more source

Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform.

Optics Express, 2021
In this letter, we report the first demonstration of monolithically integrated ultraviolet (UV) light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same p-GaN/AlGaN/GaN epi-structures grown on Si.
Qifeng Lyu, Huaxing Jiang, K. Lau
semanticscholar   +1 more source

Transparent ZnO-Based Ohmic Contact to p-GaN [PDF]

MRS Proceedings, 2001
AbstractHighly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of ~1x10-
Kaminska, E., Piotrowska, A., Golaszewska, K., Guziewicz, M., Kruszka, R., Kudla, A., Ochalski, T., Barcz, A., Dietl, T., Matsukura, F., Sawicki, M., Wawro, A., Zielinski, M., Jasinski, J., Liliental-Weber, Z.   +14 more
openaire   +2 more sources

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes [PDF]

, 2014
Cataloged from PDF version of article.N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of ...
Demir, H. V., Hasanov, N., Ji, Y., Ju, Z. G., Kyaw, Z., Liu, W., Lu, S., Sun, X. W., Tan, S. T., Zhang, X. L., Zhang, Y., Zhang, Z. H., Zhu, B.   +12 more
core   +1 more source

InGaN/GaN light-emitting diode with a polarization tunnel junction [PDF]

, 2013
Cataloged from PDF version of article.We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions.
Demir, H. V., Hasanov, N., Ji, Y., Ju, Z., Kyaw, Z., Liu, W., Sun, X. W., Tan, S. T., Zhang, Z. H.   +8 more
core   +1 more source

Bias-assisted photoelectrochemical etching of p-GaN at 300 K [PDF]

, 2000
Photoelectrochemical (PEC)etching of p-type GaN has been realized in room temperature, 0.1 M KOH solutions. PECetching of GaN was achieved by applying a positive bias to the surface of the p-GaN layer through a deposited titanium mask.
Borton, J. E., Cai, C., Chow, P., Morkoç, Hadis, Nathan, M. I., Van Hove, J. M., Wowchak, A.   +6 more
core   +2 more sources

Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Schottky-based band lineups for refractory semiconductors [PDF]

, 1995
An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted ...
Archer, Baur, Benjamin, Chrenko,, Dombrowski, Fomichev, Fujii, Glover,, Hacke, Hagen,, Harrison, Hicks, Himpsel, Ioannou, J. F. Swenberg, J. O. McCaldin, Kumashiro, Kurbatov, Lepek, Lightowlers, M. W. Wang, Martin, Martin, McCaldin, McCaldin,, Mead, Mead, Miyata, Nakamura,, Neville, Phillips, R. J. Hauenstein, Strite, T. C. McGill, Waldrop, Waldrop, Waldrop, Wang, Wang, Wu, Yoshida   +40 more
core   +4 more sources