Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping
IEEE Transactions on Electron DevicesThis article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei +5 more
openaire +2 more sources
The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure
Crystals, 2020 In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained ...
Wen-Chieh Ho +6 more
doaj +1 more source
Impact of various cleaning procedures on p‐GaN surfaces
Surface and Interface Analysis, 2023 This work discusses the influence of different cleaning procedures on p‐gallium nitride (GaN) grown on sapphire by metal–organic chemical vapor deposition. The cleaned p‐GaN surface was transferred into an ultrahigh vacuum chamber and studied by an X‐ray photoelectron spectrometer, revealing that a cleaning with a so‐called “piranha” procedure results ...
Schaber, J. +8 more
openaire +1 more source
High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes [PDF]
, 2015 We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm.
, +8 more
core +2 more sources
Hot Hole Collection and Photoelectrochemical CO_2 Reduction with Plasmonic Au/p-GaN Photocathodes [PDF]
, 2018 Harvesting nonequilibrium hot carriers from plasmonic-metal nanostructures offers unique opportunities for driving photochemical reactions at the nanoscale.
Atwater, Harry A. +4 more
core
Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide. [PDF]
, 2015 The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and ...
Chen, Yu +8 more
core +2 more sources
Advanced Functional Materials, EarlyView.A combinatorial library of dual‐functional antiviral oligomers incorporating N‐halamine and quaternary ammonium functionalities is developed for long‐lasting antiviral activity. The lead materials exhibit rapid and durable antiviral activity against SARS‐CoV‐2 variants and influenza H1N1, with 4 to 5 log reduction in viral copies at 5 mg mL−1 ...
Eid Nassar‐Marjiya +14 more
wiley +1 more source
Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization
IEEE Electron Device Letters, 2020 In this work, fast sweeping characterization with an extremely short relaxation time was used to probe the ${V}_{\text {TH}}$ instability of p-GaN gate HEMTs.
Xiangdong Li +9 more
semanticscholar +1 more source
Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer [PDF]
The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates.
An, SJ, Yi, GC
core +1 more source
Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes [PDF]
, 2013 In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material.
Aimez, Vincent +6 more
core +2 more sources