Results 61 to 70 of about 21,020,521 (317)

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

kV-class lateral NiOx/GaN superjunction diode via ammonia molecular beam epitaxy (NH3-MBE) [PDF]

APL Electronic Devices
This study reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based superjunction (SJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The SJ diode capacitance–voltage (C–V) model
Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck, Sriram Krishnamoorthy   +4 more
doaj   +1 more source

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

AIP Advances, 2022
The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles.
Yuhao Zhou, Qianshu Wu, Qi Zhang, Chengzhang Li, Jinwei Zhang, Zhenxing Liu, Ke Zhang, Yang Liu   +7 more
doaj   +1 more source

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

Low Resistance GaN/InGaN/GaN Tunnel Junctions

, 2013
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2.
Akyol, Fatih, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth   +3 more
core   +1 more source

Integrating heterogeneous distributed COTS discrete-event simulation packages: An emerging standards-based approach [PDF]

, 2006
This paper reports on the progress made toward the emergence of standards to support the integration of heterogeneous discrete-event simulations (DESs) created in specialist support tools called commercial-off-the-shelf (COTS) discrete-event simulation ...
Low, M Y H, Taylor, S J E, Turner, S J, Wang, X   +3 more
core   +2 more sources

Photoconductivity‐Driven Quantum Efficiency Gain in Inorganic Ruddlesden‐Popper Layered Cs2PbBr2I2 Perovskite Photodetector for Visible Light Detection

Advanced Functional Materials, EarlyView.
Rational halogen mixing strategy was employed to shift the bandgap of Cs2PbBr2I2 from ultraviolet to visible region, enabling first realization of a visible‐light photodetector with this 2D layered Ruddlesden‐Popper perovskite material. Under illumination, light‐induced internal field forms and drives trap‐mediated persistent photoconductivity ...
Md Fahim Al Fattah, Asif Abdullah Khan, Saikiran Khamgaonkar, Majid Haji Bagheri, Danyah Khan, Md Rasidul Islam, Mahmoud Almadoun, Aixi Pan, Alexander Li, Marwa Abd‐Ellah, Vivek Maheshwari, Dayan Ban   +11 more
wiley   +1 more source

Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiN_x Passivation Compatible to Gate Dielectrics

IEEE Journal of the Electron Devices Society
This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer.
Xinyu Sun, Hongwei Gao, Fangqing Li, Haoran Qie, Xin Chen, Haodong Wang, Yaozong Zhong, Xiaolu Guo, Xinchen Ge, Zhihong Feng, Qian Sun, Hui Yang   +11 more
doaj   +1 more source

Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes [PDF]

, 2013
By virtue of the small active volume around Cu catalyst, graphene is synthesized by fast chemical vapor deposition (CVD) in a cold wall vertical system.
Deng, J., Guo, W. L., Mao, M. M., Sun, Jie, Xu, C., Xu, K., Zheng, L., Zhu, Y. X.   +7 more
core   +1 more source

Silver Ion‐Mediated [hk1]‐Oriented Sb2Se3 Crystal Growth for Efficient Photoelectrochemical Hydrogen Evolution

Advanced Functional Materials, EarlyView.
Ag+‐mediated hydrothermal crystal engineering promotes preferential [hk1]‐oriented growth of Sb2Se3 via an ultrathin MoOx interlayer, improving crystallinity and suppressing non‐radiative recombination. The optimized Ag+ treatment photocathode delivers 24.7 mA cm−2 at 0 VRHE and improved stability, revealing an ion‐modulated route to high‐performance ...
Ziying Zhang, Zhenbin Wang, Mirjana Dimitrievska, Miloš Baljozović, Yongping Gan, Pardis Adams, Sanghyun Bae, Thomas Moehl, Wenzhe Niu, Xiang jiu Guan, S. David Tilley   +10 more
wiley   +1 more source