Results 71 to 80 of about 21,020,521 (317)

ZnO Nanorods Grown on p-GaN Using Hydrothermal Synthesis and Its Optoelectronic Devices Application [PDF]

, 2007
The ZnO nanorods with the length of 1-1.5 μm were deposited on p-GaN by hydrothermal synthesis at low temperature 100°C. The structural and optical properties of the as-grown ZnO rods were investigated by X-Ray diffraction (XRD) and photoluminescence ...
Chua, Soo-Jin, Fitzgerald, Eugene A., Le, Hong Quang, Loh, Kian Ping   +3 more
core  

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging [PDF]

, 2012
A size-dependent strain relaxation and its effects on the optical properties of InGaN/GaN multiple quantum wells (QWs) in micro-pillars have been investigated through a combination of high spatial resolution cathodoluminescence (CL) hyperspectral imaging
Chen, Y. J., Chen, Z. Z., Dawson, M. D., Edwards, P. R., Gong, Z., Gu, E., Liu, N. Y., Martin, R. W., Tao, Y. B., Watson, I. M., Xie, E. Y., Zhang, G. Y., Zhang, Y. F.   +12 more
core   +1 more source

Two Material Properties from One Wavelength‐Orthogonal Photoresin Enabled by a Monochromatic Laser Integrated Stereolithographic Apparatus (Mono LISA)

Advanced Materials, Volume 37, Issue 13, April 2, 2025.
A single object with dual properties – degradable and non‐degradable – is fabricated in a single print simply by switching the printing colors. The advanced multi‐material printing is enabled by the combination of a fully wavelength‐orthogonal photoresin and a monochromatic tunable laser printer, paving the way for precise multi‐material ...
Xingyu Wu, Katharina Ehrmann, Ching Thye Gan, Benjamin Leuschel, Fred Pashley‐Johnson, Christopher Barner‐Kowollik   +5 more
wiley   +1 more source

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Micromachines, 2021
Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR)
Yang Dai, Qingsong Ye, Jiangtao Dang, Zhaoyang Lu, Weiwei Zhang, Xiaoyi Lei, Yunyao Zhang, Han Zhang, Chenguang Liao, Yang Li, Wu Zhao   +10 more
doaj   +1 more source

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures [PDF]

, 2014
Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations.
Han-Youl Ryu
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Freeform Fabrication of Layered Halide Perovskite Nanowire Heterojunctions

Advanced Materials, EarlyView.
‘All‐at‐once’ freeform fabrication of layered perovskite nanowire heterojunctions is realized by 3D printing employing meniscus‐guided crystallization. The integration of nanoscale additive manufacturing with layered halide perovskites will provide a versatile platform to freely design and realize highly stable perovskite‐based optoelectronic ...
Sixi Cao, Yu Liu, Zhuofei Gan, Shiqi Hu, Jihyuk Yang, Zhuoran Wang, Mingjian Yuan, Wen‐Di Li, Ji Tae Kim   +8 more
wiley   +1 more source

Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy

Crystals, 2023
Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate by employing a shutter-controlled process. The transition from n-type to p-type conductivity of Mg-doped GaN in relation to the N/Ga flux ratio ...
Ying-Chieh Wang, Ikai Lo, Yu-Chung Lin, Cheng-Da Tsai, Ting-Chang Chang   +4 more
doaj   +1 more source

AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment

, 2019
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable.
Hatui, Nirupam, Jang, Raina, Keller, Stacia, Koksaldi, Onur, Krishna, Athith, Mishra, Umesh, Raj, Aditya   +6 more
core   +1 more source