Results 101 to 110 of about 1,326 (196)

Selective Plasma Mode Modulation in HfO₂ Charge Trap Layers via RP/DP/RP Atomic Layer Deposition for Enhanced Memory Performance and Interface Quality. [PDF]

Micromachines (Basel)
Kim B, Jang Y, Nam H, Hong C, Kang M, Lee W, Yoon C.   +6 more
europepmc   +1 more source

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

Thermoelectric and electronic transport properties of thermal and plasma-enhanced ALD grown titanium nitride thin films. [PDF]

Nanoscale Adv
Goel P, Kauppinen C, Raju R, Tittonen I.
europepmc   +1 more source

Flexible organic thin-film transistors for all-in-one retinomorphic acceleration enabled by inorganic-organic heterogeneous dielectrics. [PDF]

Nat Commun
Zhao Y, Zhu D, Jiang T, Wang L, Wang R, Wang G, Duan Y, Ling H, Ji D, Hu W.   +9 more
europepmc   +1 more source

PEALD 법으로 증착된 $SrTiO_3$ 박막 증착 및 특성에 관한 연구

, 2003
학위논문(석사) - 한국과학기술원 : 재료공학과, 2003.2, [ viii, 86 p. ]$SrTiO_{3}$ is a promising candidate for giga-bit scale dynamic random access memory (DRAM) capacitors because of its high dielectric constant, high breakdown strength and good thermal stability ...
Kim, Ja-Yong, 김자용
core  

A Liquid Ge(IV) Precursor for Low Temperature Plasma Enhanced Atomic Layer Deposition of Germanium Oxide Thin Films. [PDF]

Small
Preischel F, Rönnby K, Wilken M, Glauber JP, Froeschke S, Rogalla D, Gemming T, Popov AA, Dement P, Nolan M, Devi A.   +10 more
europepmc   +1 more source

Passivation Strategies for Far-Ultraviolet Al Mirrors Using Plasma-Based AlF₃ Processing. [PDF]

Chem Mater
Sales MG, Boris DR, Rodriguez de Marcos LV, Hart JL, Lang AC, Albright BS, Kessler TJ, Wollack EJ, Quijada MA, Walton SG, Wheeler VD.   +10 more
europepmc   +1 more source

Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel)
Bai Z, Ding C, Guo Y, Luo M, Zhou Z, Gu L, Zhang Q, Ma H.   +7 more
europepmc   +1 more source

PEALD of SiNx using bis(diethylamino)silane (BDEAS) precursor with N2 plasma

The 11th Workshop of the French ALD Network, Grenoble, France, November 19 to 21, 2025.Silicon nitride (SiNx) ultra-thin films are essential for semiconductor and photonic integrated circuit applications, particularly where low-temperature processing is ...
Cunha, Florival Moura, Correia, J. H., Silva, Manuel Fernando Ribeiro   +2 more
core  

Gate dielectric stack design for 2D materials-based electronics. [PDF]

Nano Converg
Jin M, Kim H, Lee S, Han S, Moon JY, Kim S, Kim K, Kim G, Seo G, Hwang Y, Lee J, Bae S, Xu Z, Kim JS, Yoon SG, Mun J, Lee JH, Choi MS, Bae SH.   +18 more
europepmc   +1 more source