Results 81 to 90 of about 1,326 (196)

Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT

Journal of Information Display
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to ...
Hye-Jin Oh, Yoon-Seo Kim, Hyun-Jun Jeong, Sunhee Lee, Joon Seok Park, Jin-Seong Park   +5 more
doaj   +1 more source

Influence of substrate biasing on structural, chemical and electrical properties of Al 2 O 3 thin films deposited by PEALD

, 2022
International audienceAbstract High- k materials are needed to minimise the gate leakage current in high-speed and high-power switching applications. In this regard, aluminium oxide (Al 2 O 3 ) deposited by plasma enhanced atomic layer deposition (PEALD)
Bassani, F, Boubenia, S, Salem, B, Labau, S, Legallais, M, Ghibaudo, Gérard, Lefevre, G, Hachemi, M   +7 more
core   +1 more source

Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Research Letters, 2017
Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD).
B. B. Wu, H. M. Zheng, Y. Q. Ding, W. J. Liu, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, S. J. Ding, David W. Zhang   +9 more
doaj   +1 more source

Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications

, 2011
RuCo films have been grown by plasma enhanced atomic layer deposition (PEALD) and investigated as a novel direct plate liner for advanced copper metallization.
Daniel V. Greenslit, Eric Eisenbraun
core   +1 more source

Comparison of PVD, PECVD and PEALD Ru-TaN films with high Ru concentration for direct Cu plating

, 2022
S.78-79This work is motivated by the quest for a material system that can simultaneously act as a Cu diffusion barrier and seed layer for the galvanic fill of vias and trenches in BEOL processing.
Wojcik, H., Engelmann, H.J., Strehle, S., Adolphi, B., Wenzel, C., Merkel, U., Lehninger, D., Liske, R., Bartha, J.W., Li, J., Knaut, M., Gluch, J., Neumann, V., Popatov, P.   +13 more
core   +1 more source

Control of subthreshold swing using an in situ PEALD nano-laminated IGZO/Al2O3 multi-channel structured TFT

Journal of Information Display
This study presents the development of multi-channel thin-film transistors (TFTs) using plasma-enhanced atomic layer deposition (PEALD) to stack layers of IGZO/Al2O3, with the number of stacking layers ranging from 1 to 10 (1S, 3S, 5S and 10S).
Won-Bum Lee, Yoon-Seo Kim, Jin-Seong Park   +2 more
doaj   +1 more source

Temperature-Dependent Growth Mechanisms and Optical Properties of MgF₂ Thin Films Synthesized by Plasma-Enhanced Atomic Layer Deposition

Chemistry
MgF2 films are prepared using plasma-enhanced atomic layer deposition (PEALD). The influence of substrate temperature on the growth behavior, chemical composition, and optical properties of MgF2 films is systematically investigated.
Shui-Yang Lien, Xiao Lin, Zhi-Xuan Zhang, Jing Zhang, Wen-Xuan Zhu, Chia-Hsun Hsu, Chen Wang   +6 more
doaj   +1 more source

Controlling NiOx properties in PEALD: The crucial role of water plasma power

Materials Science and Engineering: B
P-type nickel oxide (NiOx) thin films with tunable properties are critically important for advanced optoelectronics and photovoltaics. We report that the power of H2O plasma (50–200 W) assisting the plasma-enhanced atomic layer deposition (PEALD) serves as a key parameter for the selective engineering of the functional properties of NiOx. Structurally,
Diego G. Guzmán, Mario A. Hidrogo-Rico, Eduardo Martinez-Guerra, Francisco das Chagas Marques, Paul Horley, Ana Paula de Melo Monteiro Modesto, Isabel Mendívil-Palma, F. Servando Aguirre-Tostado   +7 more
openaire   +1 more source

Tensile behavior of amorphous alumina thin films deposited by plasma enhanced atomic layer deposition (PEALD) [PDF]

, 2019
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and moisture-diffusion barriers. Al2O3 films deposited by atomic layer deposition (ALD) have good step coverage, high density and low surface roughness ...
Woo, Jeong-Hyun, Park, Sun-Young, Kim, Ju-Young, Kim, Na-Hyang   +3 more
core   +1 more source

Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films and Heterostructures: Mechanisms and Applications

Crystals
Group III-nitride semiconductors (GaN, AlN, InN) serve as foundational materials for modern optoelectronics, high-frequency microelectronics, and next-generation energy harvesting devices.
Sanjie Liu, Zilong Zeng, Yongyong Cao, Zhenyi Deng, Xinjie Li, Zixin Liang, Rongjie Feng, Jiaping Long, Yu Liu, Ruifan Tang, Xinhe Zheng   +10 more
doaj   +1 more source