Results 61 to 70 of about 1,326 (196)
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Ultralow‐Energy Analog Reservoir Computing via Reconfigurable 2‐Transistor Memory
This work presents a reconfigurable reservoir‐computing platform based on an oxide InSnZnO two‐transistor cell in which a hold bias selects volatile relaxation for the reservoir or quasi‐non‐volatile multilevel storage for the readout. Multi‐level hold‐bias kernel tune relaxation currents to generate diverse time constants, enriching reservoir states ...
Jeong‐Min Park +11 more
wiley +1 more source
Neural network modeling and prediction of HfO 2 thin film properties tuned by thermal annealing
Plasma-enhanced atomic layer deposition (PEALD) is gaining interest in thin films for laser applications, and post-annealing treatments are often used to improve thin film properties. However, research to improve thin film properties is often based on an
Min Gao +3 more
doaj +1 more source
The impact of Cu microstructure on the thermomechanical residual stress of TSVs with a diameter of 3 μm$\umu{\rm m}$ is investigated by comparing Raman stress imaging and EBSD grain characterization. By correlating Raman‐imaged TSV stress with Cu grain structure, direct experimental evidence is provided to highlight the direct correlation between ...
Shuhang Lyu, Thomas Beechem, Tiwei Wei
wiley +1 more source
Wearable photovoltaic textiles: From device technologies to long‐term reliability
Wearable photovoltaic textiles are highlighted as reliable energy sources that combine solar cell efficiency with hierarchical textile‐specific mechanical and environmental durability. Structural and encapsulation strategies, including planarization, neutral‐axis engineering, and advanced barrier designs, enable waterproofing, washability, UV shielding,
Eun Gyo Jeong +5 more
wiley +1 more source
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam +18 more
wiley +1 more source
Synthesis of AlOxNy thin films using a two-step PE-ALD process
Homogeneous AlOxNy thin films with a controlled nitrogen composition, up to 7.1%, were grown on GaN substrate using plasma-enhanced atomic layer deposition. This was achieved through repeated cycles consisting of AlN thin layers deposition and subsequent
Mohammed Zeghouane +9 more
doaj +1 more source
In content‐addressable memory, stored data are searched far more often than they are written—yet search itself degrades the cell. A 2FeTFT ternary content‐addressable memory (TCAM) built on metal–ferroelectric–metal–insulator–semiconductor (MFMIS) ferroelectric thin‐film transistors reveals that gate‐dielectric choice governs how long the sensing ...
Hyeonjung Park +10 more
wiley +1 more source
STEM‐EELS and full‐wave FDTD reveal electron‐driven surface‐polariton modes at buried Au/oxide/Si interfaces with 10 nm SiO2 or Al2O3 spacers. Extinction is dominated by non‐radiative absorption, while oxide permittivity shifts the resonance and controls evanescent‐field penetration across the spacer into silicon.
Humaira Zafar +6 more
wiley +1 more source
An in situ integrated TiO2/SiOx/Al2O3 synaptic phototransistor couples ultraviolet and electrical stimuli within a scalable, CMOS‐compatible oxide stack. Multimodal plasticity, spike‐timing‐dependent learning, and bee‐inspired associative conditioning are achieved through trap‐mediated temporal dynamics.
Youngbin Yoon +5 more
wiley +1 more source

