Results 41 to 50 of about 1,326 (196)

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals, 2021
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Kwang-Seok Seo   +3 more
doaj   +1 more source

Effects of Nanoscale PEALD YSZ Interlayer for AAO Based Thin Film Solid Oxide Fuel Cells

, 2020
Performance of thin film solid oxide fuel cells (TF-SOFCs) were improved by inserting plasma enhanced atomic layer deposition (PEALD) of yttira-stabilized zirconia (YSZ) interlayers.
Yu, Wonjong, Lee, Yeageun, Cho, Gu Young, Tanveer, Waqas Hassan, Cha, Suk Won, Kim, Yusung, Lee, Sanghoon, Lee, Yoon Ho   +7 more
core   +1 more source

Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process

, 2023
We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator ...
Ho-Young Cha, Won-Ho Jang, Hyungtak Kim, Jun-Hyeok Yim   +3 more
core   +1 more source

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

AIP Advances, 2016
The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films
J. Provine, Peter Schindler, Yongmin Kim, Steve P. Walch, Hyo Jin Kim, Ki-Hyun Kim, Fritz B. Prinz   +6 more
doaj   +1 more source

Dataset for TiN Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium (TDMAT) and Titanium Tetrachloride (TiCl4) Precursor

Data in Brief, 2020
A dataset in this report is regarding an article “Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells” [1].
Woo-Jae Lee, Eun-Young Yun, Han-Bo-Ram Lee, Suck Won Hong, Se-Hun Kwon   +4 more
doaj   +1 more source

Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

AIP Advances, 2021
Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of
Taehyeon Kim, Changyong Oh, So Hee Park, Joo Won Lee, Sang Ik Lee, Bo Sung Kim   +5 more
doaj   +1 more source

Uniformity of HfO₂ Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition

Nanomaterials, 2022
In this study, we assessed the physical and chemical properties of HfO2 thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO2 thin film’s growth by ...
Boyun Choi, Hyeong-U Kim, Nari Jeon
doaj   +1 more source

Effect of Process Temperature on Density and Electrical Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Nanomaterials, 2022
HfxZr1−xO2 (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories.
Hak-Gyeong Kim, Da-Hee Hong, Jae-Hoon Yoo, Hee-Chul Lee   +3 more
doaj   +1 more source

Development of HfO2 PEALD Thin Films for the Conformal Coating of High Power Laser Optics

, 2023
Here, we discuss the development of HfO2 PEALD thin films for laser applications. Antireflection coatings and dielectric mirrors for 355, 532 and 1064 nm wavelength and their laser damage resistance are ...
Beladiya, Vivek, Riese, S., Schröder, Sven, Alam, Shawon, Szeghalmi, Adriana   +4 more
core   +1 more source

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +1 more source