Results 31 to 40 of about 1,326 (196)

Tailoring Performance of the LiNi0.8Mn0.1Co0.1O2 Cathode by Al2O3 and MoO3 artificial cathode electrolyte interphase (CEI) layers through plasma-enhanced atomic layer deposition (PEALD) Coating [PDF]

open access: yes, 2023
The Ni-rich layered oxide cathode conceptus has shown high energy density, proper rate capability, and longevity of the rechargeable battery, while poor stability and capacity fading are assumed as its common cons.
Seyedeh , Banitaba   +6 more
core   +1 more source

Metallic indium segregation control of InN thin films grown on Si(1 0 0) by plasma-enhanced atomic layer deposition

open access: yesResults in Physics, 2019
InN thin films were grown on Si(1 0 0) substrates by plasma-enhanced atomic layer deposition (PEALD). In this work, It is found that the island growth of InN on Si(1 0 0) easily happens at the initial PEALD period.
Yunlai An   +9 more
doaj   +1 more source

Physical characterization of PECVD and PEALD Ru(-C) films and comparison with PVD ruthenium film properties

open access: yes, 2022
S.H166-H176PECVD and PEALD of ruthenium films using RuEtcp(2) as a precursor and N-2/H-2/Ar plasma as a reducing agent were characterized. A self-adjusting process to overcome the previously reported inhibition of Ru PEALD on TaN substrates was ...
Wojcik, H.   +17 more
core   +1 more source

Optical Properties of AlTiO Films Grown by PEALD [PDF]

open access: yesECS Meeting Abstracts, 2006
Abstract not Available.
Jung-Wook Lim, Sun-Jin Yun, Hyun-Tak Kim
openaire   +1 more source

ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies [PDF]

open access: yes, 2022
The high-k materials are essential in thin-film transistors. A well-controlled thin film deposition that produces less electronic defects induced by charged vacancies is highly desirable for avoiding high leakage current and and providing an exceptional ...
Tiznado, H.   +15 more
core   +2 more sources

Al2O3 ultra-thin films deposited by PEALD and ThALD for rubidium optically pumped atomic magnetometers [PDF]

open access: yes, 2023
[Excerpt] The Atomic Layer Deposition (ALD) technique can be used to improve the rubidium optically pumped atomic magnetometers (OPMs) cell lifetime with a conformal deposition of Al2O3 ultra-thin film on the internal cell walls as a protective coating
Silva, M. F.   +2 more
core   +1 more source

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

open access: yesNanoscale Research Letters, 2017
In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks
Yan-Qiang Cao   +3 more
doaj   +1 more source

Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

open access: yesAIP Advances, 2013
We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD).
Mi-jin Jin   +5 more
doaj   +1 more source

High crystalline epitaxial thin films of NiO by plasma-enhanced ALD and their properties

open access: yesAPL Materials, 2023
NiO is an interesting transition metal oxide due to its fascinating properties. High crystalline thin films of NiO are preferred for use in a variety of device applications but are challenging to deposit at low temperatures.
Rohit Attri   +3 more
doaj   +1 more source

Tantalum-Doped TiO2 Prepared by Atomic Layer Deposition and Its Application in Perovskite Solar Cells

open access: yesNanomaterials, 2021
Tantalum (Ta)-doped titanium oxide (TiO2) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells.
Chia-Hsun Hsu   +10 more
doaj   +1 more source

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