Results 21 to 30 of about 1,326 (196)

Construction of a PEALD System and Fabrication of Cobalt Thin Films

Applied Science and Convergence Technology, 2007
A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at . was used as a cobalt precursor, as a reactant, and Ar as a carrier and purge gas. The properties of
D.H. Lee, S.J. Noh
exaly   +3 more sources

Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) [PDF]

MATEC Web of Conferences, 2016
This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
doaj   +3 more sources

Phase Engineering of Plasma-Enhanced Atomic Layer Deposited Molybdenum Disulfide Using High Accuracy Direct Writing With Focused Li⁺ and Ga⁺ Ion Beams and Ultrashort Pulse Laser. [PDF]

Small
In the context of phase heterostructures on two‐dimensional materials, a high‐precision direct writing approach is employed. This involves using a focused ion beam to transform molybdenum disulfide to the metallic 1T phase, followed by retransformation via ultrashort pulse laser processing.
Krüner M, Nadzeyka A, Becher MJMJ, Liao Z, Rogalla D, Clausner A, Ostendorf A, Kahl M, Bock C.   +8 more
europepmc   +2 more sources

Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing. [PDF]

Adv Sci (Weinh)
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Lee S, Park J, Kim N, Ju S, Jang SC, Kim HS, Kim S.   +6 more
europepmc   +2 more sources

Interplay of precursor and plasma for The deposition of HfO\(_2\) via PEALD

, 2023
HfO\(_2\) thin films are appealing for microelectronic applications such as high-\(\kappa\) dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be tuned accordingly. In this context, plasma-enhanced atomic layer deposition (PEALD) is
Preischel, Florian, Zanders, David (Dr. rer. nat.), Berning, Thomas (M. S.), Kostka, Aleksander (Dr.-Ing.), Rogalla, Detlef (Dr. rer. nat.), Bock, Claudia (Dr.-Ing.), Devi, Anjana (Prof. Dr. Dr. h.c.)   +6 more
openaire   +2 more sources

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Beilstein Journal of Nanotechnology, 2023
In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma.
Mathias Franz, Mahnaz Safian Jouzdani, Lysann Kaßner, Marcus Daniel, Frank Stahr, Stefan E. Schulz   +5 more
doaj   +1 more source

Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnO_x Films at Different Substrate Temperatures

Nanomaterials, 2022
The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4.
Pao-Hsun Huang, Zhi-Xuan Zhang, Chia-Hsun Hsu, Wan-Yu Wu, Sin-Liang Ou, Chien-Jung Huang, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu   +8 more
doaj   +1 more source

Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells

Nanomaterials, 2021
Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells.
Hyun-Jae Woo, Woo-Jae Lee, Eun-Kyong Koh, Seung Il Jang, Shinho Kim, Hyoungseok Moon, Se-Hun Kwon   +6 more
doaj   +1 more source

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Molecules, 2022
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu   +8 more
doaj   +1 more source

Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO₂ Coating

Micromachines, 2021
The chemical, structural, morphological, and optical properties of Al-doped TiO2 thin films, called TiO2/Al2O3 nanolaminates, grown by plasma-enhanced atomic layer deposition (PEALD) on p-type Si and commercial SLG glass were discussed.
William Chiappim, Giorgio Testoni, Felipe Miranda, Mariana Fraga, Humber Furlan, David Ardiles Saravia, Argemiro da Silva Sobrinho, Gilberto Petraconi, Homero Maciel, Rodrigo Pessoa   +9 more
doaj   +1 more source