Results 11 to 20 of about 1,326 (196)

PEALD SIS Studies for SRF Cavities

open access: yes, 2022
Recent technological advances and material treatments have pushed Nb SRF cavities to their maximum RF performance. A novel approach for overcoming this limitation, which takes advantage of RF field only penetrates into the superconductor at a certain distance called London penetration depth, is nano-structuring multilayers with PEALD (plasma-enhanced ...
Gonzalez Diaz-Palacio, Isabel   +8 more
openaire   +4 more sources

Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties

open access: yesAdvanced Materials Interfaces, 2023
HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be ...
Florian Preischel   +6 more
doaj   +2 more sources

MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion

open access: yesNanomaterials, 2020
In this paper, we report the plasma-enhanced atomic layer deposition (PEALD) of TiO2 and TiO2/Al2O3 nanolaminate films on p-Si(100) to fabricate metal-oxide-semiconductor (MOS) capacitors.
William Chiappim   +8 more
doaj   +2 more sources

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

open access: yesAdvanced Materials Interfaces, 2023
Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as
Namgyu Woo   +2 more
doaj   +2 more sources

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

open access: yesNanomaterials, 2022
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various ...
Xiao-Ying Zhang   +8 more
doaj   +2 more sources

Ti-metalation of chitosan films by VPM, MPI and PEALD processes: An avenue to antiseptic scaffolds and functional biopolymers [PDF]

open access: yesApplied Surface Science Advances
This study investigates the impact of different Atomic Layer Deposition techniques on the Ti-metalation of chitosan (CS) for biomedical applications. Three methods – vapour phase metalation (VPM), multiplied pulsed vapour phase infiltration (MPI), and O₂
Mabel Moreno   +17 more
doaj   +5 more sources

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

open access: yesNanoscale Research Letters, 2017
Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated.
Sanjie Liu   +5 more
doaj   +2 more sources

Development of an innovative low-temperature PEALD process for stress-compensated TiO2 and SiO2 multilayer anti-reflective coatings [PDF]

open access: yesDiscover Nano
This study presents a low-temperature plasma-enhanced atomic layer deposition (PEALD) technique for fabricating high-performance, stress-reduced anti-reflective coatings (ARCs).
Duy Thanh Cu   +5 more
doaj   +2 more sources

Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings [PDF]

open access: yesNanomaterials, 2017
Plasma enhanced atomic layer deposition (PEALD) of silver nanoparticles on the surface of 1-D titania coatings, such as nanotubes (TNT) and nanoneedles (TNN), has been carried out.
Aleksandra Radtke   +8 more
doaj   +2 more sources

Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments [PDF]

open access: yesNanomaterials
The tin dioxide (SnO2) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen ...
Qi-Zhen Chen   +6 more
doaj   +2 more sources

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