Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N′-di-butylacetamidinato)iron(II) [PDF]
Nanomaterials, 2023 Only a few iron precursors that can be used in the atomic layer deposition (ALD) of iron oxides have been examined thus far. This study aimed to compare the various properties of FeOx thin films deposited using thermal ALD and plasma-enhanced ALD (PEALD)
Boyun Choi +3 more
doaj +2 more sources
Plasma-Enhanced Atomic Layer Deposition of AlF3 Antireflective Coatings via Pulse-Time Control of Fluorine Radical Reactions [PDF]
NanomaterialsPlasma-enhanced atomic layer deposition (PEALD) is used to grow high-quality aluminum fluoride (AlF3) antireflective coatings via a safe, HF-free route using trimethylaluminum and SF6 plasma.
Jing Zhang +6 more
doaj +2 more sources
Influence of deposition conditions on ALD based Ru passivation for Cu-Cu hybrid bonding [PDF]
Scientific ReportsCu-Cu hybrid bonding is a key technology for fine-pitch interconnections in advanced semiconductor packaging. However, native Cu oxidation and interface instability hinder reliable low-temperature bonding.
Sang Woo Park +3 more
doaj +2 more sources
PEALD AlN: Controlling growth and film crystallinity
Physica Status Solidi C: Current Topics in Solid State Physics, 2015 AbstractWe report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri‐methyl aluminium (TMA) and NH3‐plasma were used as the precursors. The ALD window was identified in terms of the process parameters, and it showed that a 0.1 s of TMA pulse, 8 ...
Alexey Kovalgin +2 more
exaly +2 more sources
Evaluation of plasma parameters on PEALD deposited TaCN
Microelectronic Engineering, 2013 In this article influence of plasma parameters on TaCN deposition using Plasma Enhanced Atomic Layer Deposition (PEALD) is studied. TaCN is deposited on 300mm Si substrate with the organometallic precursor Tertiary-ButylimidoTrisDiEthyl-aminoTantalum (TBTDET) and H"2/Ar plasma at different plasma power.
Fabien Piallat, Christophe Vallée
exaly +4 more sources
Recent Achievements for Flexible Encapsulation Films Based on Atomic/Molecular Layer Deposition [PDF]
MicromachinesThe purpose of this paper is to review the research progress in the realization of the organic–inorganic hybrid thin-film packaging of flexible organic electroluminescent devices using the PEALD (plasma-enhanced atomic layer deposition) and MLD ...
Buyue Zhang +3 more
doaj +2 more sources
Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition [PDF]
NanomaterialsThe advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density.
Qizhen Chen +4 more
doaj +2 more sources
Advanced Electronic Materials, 2023 In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical characteristics for application in thin‐film transistor (TFT) applications such as low off current and relatively high mobility.
Jin-Seong Park, Taehyun Hong
exaly +2 more sources
Device to Circuit Co‐Design Utilizing High‐Performance PEALD Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems [PDF]
Advanced ScienceThe development of oxide semiconductor devices for monolithic 3D (M3D) integration has largely remained at the device level, limiting progress toward large‐scale applications.
Wenhui Wang +11 more
doaj +2 more sources
Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC [PDF]
NanomaterialsAn Al2O3/AlN stack deposited via Atomic Layer Deposition (ALD) methods as a gate insulator for silicon carbide (4H-SiC) has been investigated, focusing on the effects of different Al2O3 deposition processes on the nitride layer. In particular, dielectric
Bruno Galizia +7 more
doaj +2 more sources