Results 1 to 10 of about 104 (88)

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals, 2021
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively.
Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Kwang-Seok Seo   +3 more
doaj   +1 more source

Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells

Nanomaterials, 2021
Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells.
Hyun-Jae Woo, Woo-Jae Lee, Eun-Kyong Koh, Seung Il Jang, Shinho Kim, Hyoungseok Moon, Se-Hun Kwon   +6 more
doaj   +1 more source

Dataset for TiN Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium (TDMAT) and Titanium Tetrachloride (TiCl4) Precursor

Data in Brief, 2020
A dataset in this report is regarding an article “Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells” [1].
Woo-Jae Lee, Eun-Young Yun, Han-Bo-Ram Lee, Suck Won Hong, Se-Hun Kwon   +4 more
doaj   +1 more source

Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties

Advanced Materials Interfaces, 2023
HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be ...
Florian Preischel, David Zanders, Thomas Berning, Aleksander Kostka, Detlef Rogalla, Claudia Bock, Anjana Devi   +6 more
doaj   +1 more source

Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Nanomaterials, 2023
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee   +6 more
doaj   +1 more source

Tantalum-Doped TiO₂ Prepared by Atomic Layer Deposition and Its Application in Perovskite Solar Cells

Nanomaterials, 2021
Tantalum (Ta)-doped titanium oxide (TiO2) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells.
Chia-Hsun Hsu, Ka-Te Chen, Ling-Yan Lin, Wan-Yu Wu, Lu-Sheng Liang, Peng Gao, Yu Qiu, Xiao-Ying Zhang, Pao-Hsun Huang, Shui-Yang Lien, Wen-Zhang Zhu   +10 more
doaj   +1 more source

Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N′-di-butylacetamidinato)iron(II)

Nanomaterials, 2023
Only a few iron precursors that can be used in the atomic layer deposition (ALD) of iron oxides have been examined thus far. This study aimed to compare the various properties of FeOx thin films deposited using thermal ALD and plasma-enhanced ALD (PEALD)
Boyun Choi, Gun-Woo Park, Jong-Ryul Jeong, Nari Jeon   +3 more
doaj   +1 more source

Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

AIP Advances, 2021
Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of
Taehyeon Kim, Changyong Oh, So Hee Park, Joo Won Lee, Sang Ik Lee, Bo Sung Kim   +5 more
doaj   +1 more source

Uniformity of HfO₂ Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition

Nanomaterials, 2022
In this study, we assessed the physical and chemical properties of HfO2 thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO2 thin film’s growth by ...
Boyun Choi, Hyeong-U Kim, Nari Jeon
doaj   +1 more source

Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al₂O₃ Film Growth

Nanomaterials, 2023
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves, William Chiappim, Júlia Karnopp, Benedito Neto, Douglas Leite, Argemiro da Silva Sobrinho, Rodrigo Pessoa   +6 more
doaj   +1 more source