Results 11 to 20 of about 5,793,946 (166)

Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) [PDF]

open access: yesMATEC Web of Conferences, 2016
This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas.
Chen Z.X., Li X., Li W.-M., Lo G.-Q.
doaj   +3 more sources

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

open access: yesIEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park   +13 more
doaj   +2 more sources

Plasma-Enhanced Atomic Layer Deposition of AlF3 Antireflective Coatings via Pulse-Time Control of Fluorine Radical Reactions [PDF]

open access: yesNanomaterials
Plasma-enhanced atomic layer deposition (PEALD) is used to grow high-quality aluminum fluoride (AlF3) antireflective coatings via a safe, HF-free route using trimethylaluminum and SF6 plasma.
Jing Zhang   +6 more
doaj   +2 more sources

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC [PDF]

open access: yesNanomaterials
An Al2O3/AlN stack deposited via Atomic Layer Deposition (ALD) methods as a gate insulator for silicon carbide (4H-SiC) has been investigated, focusing on the effects of different Al2O3 deposition processes on the nitride layer. In particular, dielectric
Bruno Galizia   +7 more
doaj   +2 more sources

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing [PDF]

open access: yesAdvanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee   +6 more
wiley   +2 more sources

Phase Engineering of Plasma‐Enhanced Atomic Layer Deposited Molybdenum Disulfide Using High Accuracy Direct Writing With Focused Li+ and Ga+ Ion Beams and Ultrashort Pulse Laser [PDF]

open access: yesSmall, Volume 22, Issue 53, 21 September 2026.
In the context of phase heterostructures on two‐dimensional materials, a high‐precision direct writing approach is employed. This involves using a focused ion beam to transform molybdenum disulfide to the metallic 1T phase, followed by retransformation via ultrashort pulse laser processing.
Marvin Krüner   +8 more
wiley   +2 more sources

Influence of deposition conditions on ALD based Ru passivation for Cu-Cu hybrid bonding [PDF]

open access: yesScientific Reports
Cu-Cu hybrid bonding is a key technology for fine-pitch interconnections in advanced semiconductor packaging. However, native Cu oxidation and interface instability hinder reliable low-temperature bonding.
Sang Woo Park   +3 more
doaj   +2 more sources

Biointegrated Multilayer Stretchable OLED Platform With Strain‐Decoupled Architecture for Durable Phototherapeutic Applications [PDF]

open access: yesAdvanced Science, Volume 13, Issue 51, 14 September 2026.
A multilayer stretchable organic light‐emitting diode (SOLED) patch enables conformal, high‐fill‐factor phototherapeutic illumination through vertically decoupled electrodes and robust encapsulation. The textile‐based SOLED platform delivers stable skin‐contact red light for wearable phototherapy and 5‐aminolevulinic acid (ALA)‐mediated photodynamic ...
Young Hyun Son   +5 more
wiley   +2 more sources

Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition [PDF]

open access: yesNanomaterials
The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density.
Qizhen Chen   +4 more
doaj   +2 more sources

Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments [PDF]

open access: yesNanomaterials
The tin dioxide (SnO2) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen ...
Qi-Zhen Chen   +6 more
doaj   +2 more sources

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