Results 41 to 50 of about 5,793,946 (166)

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Edge-site nano-engineering of WS2 by low temperature plasma-enhanced atomic layer deposition for electrocatalytic hydrogen evolution [PDF]

, 2019
Edge-enriched transition metal dichalcogenides, such as WS 2, are promising electrocatalysts for sustainable production of H 2 through the electrochemical hydrogen evolution reaction (HER).
Bol, AA Ageeth, Kessels, WMM Erwin, Balasubramanyam, S, Wu, L Longfei, Bol, Ageeth A., Shirazi, Mahdi, Wu, Longfei, Kessels, Wilhelmus M. M., Bloodgood, Matthew A., Shirazi, M, Kessels, Erwin, Vandalon, V Vincent, Hofmann, Jan P., Verheijen, Marcel, Bloodgood, Matthew, Verheijen, Marcel A., Hofmann, Jan Philipp, Verheijen, MA Marcel, Hofmann, JP Jan Philipp, Vandalon, Vincent, Balasubramanyam, Shashank   +20 more
core   +4 more sources

Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Research Letters, 2017
Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD).
B. B. Wu, H. M. Zheng, Y. Q. Ding, W. J. Liu, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, S. J. Ding, David W. Zhang   +9 more
doaj   +1 more source

Out‐of‐Plane Strain‐Decoupled Architecture for High‐Fill‐Factor Stretchable OLED Displays

Advanced Functional Materials, EarlyView.
A vertically decoupled multilayer SOLED architecture separates emissive pixel islands from deformable interconnects, allowing low‐modulus elastomeric layers to accommodate applied strain and suppress strain transfer to the OLED region. This design, combined with transparent hybrid encapsulation, enables a high fill factor (∼75%), stretchability ...
Young Hyun Son, Kyung Cheol Choi, Jeong Hyun Kwon   +2 more
wiley   +1 more source

Effect of Process Temperature on Density and Electrical Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Nanomaterials, 2022
HfxZr1−xO2 (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories.
Hak-Gyeong Kim, Da-Hee Hong, Jae-Hoon Yoo, Hee-Chul Lee   +3 more
doaj   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source

Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnO_x Films at Different Substrate Temperatures

Nanomaterials, 2022
The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4.
Pao-Hsun Huang, Zhi-Xuan Zhang, Chia-Hsun Hsu, Wan-Yu Wu, Sin-Liang Ou, Chien-Jung Huang, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu   +8 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing

, 2018
Complex interference multilayer systems typically implemented in high-performance optics consists of several layers of low and high refractive index materials.
Szeghalmi, A., Beladiya, V., Tünnermann, A., Kessels, W.M.M., Faraz, T.   +4 more
core   +1 more source