Results 61 to 70 of about 5,793,946 (166)

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition:an experimental and computational study [PDF]

, 2020
\u3cp\u3eThe growth, chemical, structural, mechanical, and optical properties of oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) are strongly influenced by the average-bias voltage applied during the reaction step of surface
Kessels, WMM Erwin, Faraz, Tahsin, Helbing, Christian, Tünnermann, Andreas, Faraz, T Tahsin, Gruenewald, Marco, Becker, Martin, Jandt, Klaus D, Beladiya, Vivek, Fritz, Torsten, Sierka, Marek, Kessels, W.M.M., Jandt, Klaus D., Otto, Felix, Schenk, Paul, Szeghalmi, Adriana   +15 more
core   +2 more sources

Experimental and Computational Investigations of Surface Polaritons at Metal‐Oxide‐Semiconductor Interfaces

Nanophotonics, Volume 15, Issue 17, 11 September 2026.
STEM‐EELS and full‐wave FDTD reveal electron‐driven surface‐polariton modes at buried Au/oxide/Si interfaces with 10 nm SiO2 or Al2O3 spacers. Extinction is dominated by non‐radiative absorption, while oxide permittivity shifts the resonance and controls evanescent‐field penetration across the spacer into silicon.
Humaira Zafar, Qiang Zhang, Rainer Straubinger, Ayman Rezek, Mauro Pereira, Ammar Nayfeh, Dalaver H. Anjum   +6 more
wiley   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B., Ashburn, P., Fang, Q., Gunn, R., Allen, M. W., Partridge, J., Clark, O.D., Sultan, S.M., Sun, K., Chong, H.M.H.   +9 more
core   +1 more source

Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films [PDF]

, 2018
Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from TiCl4, SiH4, and N-2/H-2/Ar plasma at 350 degrees C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from TiCl4.
Kim, H, Park, JS, Kang, SW
core   +1 more source

Plasma atomic layer deposition [PDF]

, 2017
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.

core   +2 more sources

In Situ Integrated Titanium Oxide Synaptic Phototransistor Enabling Multimodal Plasticity and Noise‐Robust Selective Attention

Advanced Materials Technologies, Volume 11, Issue 18, 18 September 2026.
An in situ integrated TiO2/SiOx/Al2O3 synaptic phototransistor couples ultraviolet and electrical stimuli within a scalable, CMOS‐compatible oxide stack. Multimodal plasticity, spike‐timing‐dependent learning, and bee‐inspired associative conditioning are achieved through trap‐mediated temporal dynamics.
Youngbin Yoon, Jaehee Lee, Jeongwook Kwon, Yongki Kim, Myunghun Shin, Jung Wook Lim   +5 more
wiley   +1 more source

Patterned deposition by plasma enhanced spatial atomic layer deposition

, 2011
An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma.
Hans Winands, Poodt, P., Branca, A, Roozeboom, F., Paul Poodt, Kniknie, B.J., Poodt, P.W.G., Annalisa Branca, Fred Roozeboom, Bas Kniknie, Kniknie, B., Winands, G.J.J., Branca, A.   +12 more
core   +1 more source

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Beilstein Journal of Nanotechnology, 2023
In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma.
Mathias Franz, Mahnaz Safian Jouzdani, Lysann Kaßner, Marcus Daniel, Frank Stahr, Stefan E. Schulz   +5 more
doaj   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Hydrogen–argon plasma pre-treatment for improving the anti-corrosion properties of thin Al2O3 films deposited using atomic layer deposition on steel

, 2013
The effect of H2–Ar plasma pre-treatment prior to thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PEALD) of Al2O3 films on steel for corrosion protection was investigated.
Potts, SE Stephen, Kessels, WMM Erwin, Swiatowska, J., Díaz, B., Tóth, L., Swiatowska, J, Radnóczi, G, Maurice, V., Niinistö, J., Maurice, V, Seyeux, A., Härkönen, E., Díaz, B, Kariniemi, M., Kariniemi, M, Seyeux, A, Potts, Stephen E., Härkönen, E, Radnóczi, György, Tóth, L, Potts, S.E., Radnóczi, G., Marcus, P., Tóth, Lajos, Niinistö, J, Härkönen, Emma, Marcus, P, Kessels, W.M.M., Ritala, M., Ritala, M   +29 more
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