Results 71 to 80 of about 5,793,946 (166)

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

Advanced Electronic Materials, 2023
In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical characteristics for application in thin‐film transistor (TFT) applications such as low off current and relatively high mobility.
TaeHyun Hong, Yoon‐Seo Kim, Su‐Hwan Choi, Jun Hyung Lim, Jin‐Seong Park   +4 more
doaj   +1 more source

Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

, 2023
SiN deposition at low temperatures using the plasma-enhanced atomic layer deposition (PEALD) process is gaining momentum. A high-quality SiN layer deposited using a lower thermal budget and low wet etch rates are desired for front-end-of-line ...
Dorai Swamy Reddy, Keerthi, Kalishettyhalli Mahadevaiah, Mamathamba, Lisker, Marco   +2 more
core   +1 more source

Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films [PDF]

, 2010
Many reported atomic layer deposition (ALD) processes are carried out at elevated temperatures (>150°C), which can be problematic for temperature-sensitive substrates.
Sanden, MCM Richard van de, Potts, SE Stephen, Kessels, WMM Erwin, Langereis, E., Sanden, van de, M.C.M., Keuning, W Wytze, Potts, S.E., Langereis, E Erik, Dingemans, G., Kessels, W.M.M., Dingemans, G Gijs, Keuning, W.   +11 more
core   +2 more sources

Robust Antiferroelectric Response in the Pbca Phase of Hafnium Zirconium Oxide via Aluminum Substitution

Journal of the American Ceramic Society, Volume 109, Issue 9, September 2026.
ABSTRACT Hafnium zirconium oxide (HZO) has attracted attention for applications in nonvolatile memory and energy harvesting devices. However, it faces practical challenges such as insufficient endurance. One promising strategy to address this limitation is the utilization of antiferroelectric (AFE) behavior in HZO‐based materials. Previous studies have
Yong Kyu Choi, MinChul Kang, Tinsae Alem, Nicolas K. Lam, Andrea L. Watson, Kory Burns, Stephen J. McDonnell, Lin Zhou, Jon F. Ihlefeld   +8 more
wiley   +1 more source

Development of Multifunctional Hierarchically Restructured Antibacterial Neural Interfacing Electrodes via Plasma‐Enhanced Atomic Layer Deposition of Zinc Oxide Thin Films

Advanced Functional Materials, Volume 36, Issue 69, 27 August 2026.
ABSTRACT Next‐generation implantable neural‐interfacing devices are increasingly constrained by the coupled demands of electrode miniaturization, electrochemical performance, and implantation infection risk. Femtosecond laser–based hierarchical surface restructuring (HSR) technology has emerged as a scalable, manufacturing‐compatible platform for ...
Henna Khosla, Wesley Seche, Kriti Panchal, Steven J. May, Ekaterina Pomerantseva, Jacob Elmer, Tyler Cooper, Matthew J. Urban, Hailey Y. Maurer, Gregory A. Caputo, Jeffrey Hettinger, Shahram Amini, Gang Feng   +12 more
wiley   +1 more source

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, Volume 36, Issue 70, 31 August 2026.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source

Effect of plasma power of plasma enhanced atomic layer deposition process for gate insulator deposition in top-gate thin-film transistors

, 2015
In this work, plasma enhanced atomic layer deposition process (PEALD) was used for the depositing SiO2 as the insulating layer with various plasma power.
Yeom, HI, Hwang, CS, Cho, S, Ko, JB, Park, Sang-Hee Ko   +4 more
core   +1 more source

Electrically Coded Retinomorphic Spectrophotodetector

Advanced Materials, Volume 38, Issue 48, 26 August 2026.
Self‐powered retinomorphic pyro‐photodetector is demonstrated that avoids machine‐learning post‐processing and covers 365–940 nm. Electrostatic balancing of built‐in potential produces an electrical wavelength code, delivering <3 nm wavelength decoding accuracy with ∼46 µs response.
Mohit Kumar, Hyunmin Dang, Hyungtak Seo
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS₂ from WF₆, H₂ Plasma, and H₂S

, 2017
Two-dimensional (2D) transition metal dichalcogenides are potential low dissipative semiconductor materials for nanoelectronic devices. Such applications require the deposition of these materials in their crystalline form and with controlled number of ...
Iuliana Radu (3840676), Matty Caymax (1697005), Ankit Nalin Mehta (3840685), Thomas Nuytten (3126453), Johan Meersschaut (1604593), Sven Van Elshocht (1924207), Patrick Verdonck (2109967), Annelies Delabie (1630048), Markus Heyne (3840682), Benjamin Groven (3840679), Stefan De Gendt (1435549), Thierry Conard (1689082), Marc Heyns (1435552), Wilfried Vandervorst (1370487), Hugo Bender (1466626)   +14 more
core   +1 more source

(Invited) Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects

, 2010
The deposition of TaN thin films were achieved using plasma enhanced atomic layer deposition (PEALD) technique. In this paper, we demonstrate the ability to adjust film properties such as film composition, density and resistivity with various plasma ...
Mei Chang, Paul Ma, Jiang Lu, Joseph Aubuchon, Tza-Jing Gung   +4 more
core   +1 more source