Results 81 to 90 of about 5,793,946 (166)
Atomic layer deposition for hafnium oxide-based meta-optics in the ultraviolet spectral range
Hafnium oxide (HfO2) is a high-index dielectric material of growing importance for optical coatings and meta-optical components operating from the ultraviolet (UV) to the visible spectral range.
Siefke Thomas +8 more
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Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition
Plasma-enhanced atomic layer deposition (PEALD) is a widely used, powerful layer-by-layer coating technology. Here, we present an atomistic simulation scheme for PEALD processes, combining the Monte Carlo deposition algorithm and structure relaxation ...
Martin Becker, Marek Sierka
core +1 more source
Neural network modeling and prediction of HfO 2 thin film properties tuned by thermal annealing
Plasma-enhanced atomic layer deposition (PEALD) is gaining interest in thin films for laser applications, and post-annealing treatments are often used to improve thin film properties. However, research to improve thin film properties is often based on an
Min Gao +3 more
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Co3O4-coated commercial TiO2 powders (P25) p-n junction photocatalysts were prepared by plasma-enhanced atomic layer deposition (PEALD) technique. The structure, morphology, bandgap, and photocatalytic properties under ultraviolet light were investigated
Xi-Rui Zhao +6 more
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The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has
Anup L. Dadlani (1466350) +9 more
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Modelling water vapor permeability through atomic layer deposition coated photovoltaic barrier defects [PDF]
Transparent barrier films such as Al2O3 used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules.
Robbins, David +5 more
core +1 more source
Three-dimensional ZnO structures were prepared by both thermal atomic layer deposition (ThALD) and plasma-enhanced atomic layer deposition (PEALD) on a sacrificial cellulose template.
Ambrožić, Gabriela +11 more
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Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to ...
Hye-Jin Oh +5 more
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We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 ...
An-Jye Tzou +11 more
doaj +1 more source
MgF2 films are prepared using plasma-enhanced atomic layer deposition (PEALD). The influence of substrate temperature on the growth behavior, chemical composition, and optical properties of MgF2 films is systematically investigated.
Shui-Yang Lien +6 more
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