Results 31 to 40 of about 5,793,946 (166)

Crystallinity Effect on Electrical Properties of PEALD–HfO₂ Thin Films Prepared by Different Substrate Temperatures

Nanomaterials, 2022
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various ...
Xiao-Ying Zhang, Jing Han, Duan-Chen Peng, Yu-Jiao Ruan, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu   +8 more
doaj   +1 more source

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

AIP Advances, 2016
The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films
J. Provine, Peter Schindler, Yongmin Kim, Steve P. Walch, Hyo Jin Kim, Ki-Hyun Kim, Fritz B. Prinz   +6 more
doaj   +1 more source

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Research Letters, 2017
In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks
Yan-Qiang Cao, Bing Wu, Di Wu, Ai-Dong Li   +3 more
doaj   +1 more source

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Molecules, 2022
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications.
Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu   +8 more
doaj   +1 more source

Energetic Ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties [PDF]

, 2019
Plasma-enhanced atomic layer deposition (PEALD) has obtained a prominent position in the synthesis of nanoscale films with precise growth control. Apart from the well-established contribution of highly reactive neutral radicals towards film growth in ...
Kessels, WMM Erwin, Knoops, H.C.M.; id_orcid, Arts, K Karsten, Karwal, S, Arts, K., Knoops, H.C.M., Faraz, T Tahsin, Knoops, HCM Harm, Kessels, W.M.M., Faraz, T., Karwal, S.   +10 more
core   +2 more sources

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Advanced Materials Interfaces, 2023
Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as
Namgyu Woo, Seong‐In Cho, Sang‐Hee Ko Park   +2 more
doaj   +1 more source

MOS Capacitance Measurements for PEALD TiO₂ Dielectric Films Grown under Different Conditions and the Impact of Al₂O₃ Partial-Monolayer Insertion

Nanomaterials, 2020
In this paper, we report the plasma-enhanced atomic layer deposition (PEALD) of TiO2 and TiO2/Al2O3 nanolaminate films on p-Si(100) to fabricate metal-oxide-semiconductor (MOS) capacitors.
William Chiappim, Marcos Watanabe, Vanessa Dias, Giorgio Testoni, Ricardo Rangel, Mariana Fraga, Homero Maciel, Sebastião dos Santos Filho, Rodrigo Pessoa   +8 more
doaj   +1 more source

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Silicon Dioxide and Aluminum Oxide

, 2019
Atomic layer deposition (ALD) is a powerful deposition technique for the fabrication of highly conformal and precise thickness-controlled films. Recently, there has been a growing interest in low-temperature (< 100˚C) ALD because of the emerging ...
Zhu, Zhen
core   +1 more source

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

Nanoscale Research Letters, 2017
Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated.
Sanjie Liu, Mingzeng Peng, Caixia Hou, Yingfeng He, Meiling Li, Xinhe Zheng   +5 more
doaj   +1 more source

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

, 2020
Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since
Jeong Hwan Han, Taek-Mo Chung, Jong Hyeon Won, Seong Ho Han, Bo Keun Park   +4 more
core   +1 more source