Results 51 to 60 of about 1,326 (196)

Interactions of Metal-Organic PEALD TaN with Ultra-Low k Dielectric Materials

, 2010
Both dense and porous patterned ultra-low k (ULK) substrates have been characterized in terms of their interaction with TaN grown by plasma enhanced atomic layer deposition (PEALD).
O. Van der Straten, J. Maniscalco, J. Demarest, Hosadurga Shobha   +3 more
core   +1 more source

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiNx GaN MISFET with In Situ H2/N2 Plasma Pretreatment

, 2023
An effective in situ H2/N2 pretreatment technique for enhancement-mode GaN MISFET with a PEALD AlN/LPCVD SiNx Dual Gate Dielectric is presented. This technique features in situ H2 (15%)/N2 (85%) plasma pretreatment prior to AlN deposition.
Jinyan Wang, Li, Mengjun, He, Jin, Jin He, Chengyu Huang, Mengjun Li, Wang, Jinyan, Wang, Maojun, Zhang, Bin, Maojun Wang, He, Yandong, Huang, Chengyu, Yandong He, Bin Zhang   +13 more
core   +1 more source

AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms

RSC Advances, 2021
Plasma effect on PEALD AIN growth rate follows a similar trend but shifts to longer plasma dose time when deposition temperature decreases.
Mengmeng Miao, Ken Cadien
openaire   +3 more sources

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology

, 2011
In this paper we compare a novel plasma-enhanced atomic layer deposition (PEALD) oxide with more conventional HTO and ISSG oxides. We show that, remarkably for a deposited oxide, the oxide quality is, both in terms of field-to-breakdown and SILC ...
G. S. Kar, Lucien Date, L. Breuil, I. Debusschere, J. Van Houdt, Won Lee, X. Shi, M. Zahid, Andrew Cockburn, Maggie Le, H. Dekker, Li-Qun Xa, J.L. Everaert, A. Cacciato, G. Van den bosch, M. Jurczak, G. Schoofs   +16 more
core   +1 more source

Out‐of‐Plane Strain‐Decoupled Architecture for High‐Fill‐Factor Stretchable OLED Displays

Advanced Functional Materials, EarlyView.
A vertically decoupled multilayer SOLED architecture separates emissive pixel islands from deformable interconnects, allowing low‐modulus elastomeric layers to accommodate applied strain and suppress strain transfer to the OLED region. This design, combined with transparent hybrid encapsulation, enables a high fill factor (∼75%), stretchability ...
Young Hyun Son, Kyung Cheol Choi, Jeong Hyun Kwon   +2 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source

High-uniformity atomic layer deposition of superconducting niobium nitride thin films for quantum photonic integration

Materials for Quantum Technology, 2023
Atomic layer deposition (ALD) has been identified as a promising growth method for high-uniformity superconducting thin films for superconducting quantum photonic applications, offering superior uniformity, thickness control and conformality to ...
C T Lennon, Y Shu, J C Brennan, D K Namburi, V Varghese, D T Hemakumara, L A Longchar, S Srinath, R H Hadfield   +8 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Si Doping in Amorphous GaO_x Films via Plasma-Enhanced ALD for Dielectric and Optoelectronic Applications

IEEE Journal of the Electron Devices Society
Ga2O3 is a representative next-generation wide-bandgap semiconductor. Si doping in Ga2O3 plays a crucial role in optimizing performance and expanding applications.
Yongjie He, Jingxuan Wei, Jining Yang, Rongxu Bai, Qingqing Sun, Hao Zhu   +5 more
doaj   +1 more source