Results 71 to 80 of about 1,326 (196)

PEALD 법으로 증착된 RuTiN 박막 증착 및 특성에 관한 연구

, 2004
학위논문(석사) - 한국과학기술원 : 신소재공학과, 2004.2, [ viii, 93 p. ]Copper (Cu) has been used as a interconnection metal to enhance operating speed and reliability due to its lower electrical resistivity and high electromigration (EM) resistance compared with ...
Kwon, Se-Hoon, 권세훈
core   +1 more source

Biointegrated Multilayer Stretchable OLED Platform With Strain‐Decoupled Architecture for Durable Phototherapeutic Applications

Advanced Science, Volume 13, Issue 51, 14 September 2026.
A multilayer stretchable organic light‐emitting diode (SOLED) patch enables conformal, high‐fill‐factor phototherapeutic illumination through vertically decoupled electrodes and robust encapsulation. The textile‐based SOLED platform delivers stable skin‐contact red light for wearable phototherapy and 5‐aminolevulinic acid (ALA)‐mediated photodynamic ...
Young Hyun Son, Myeongheon Lee, Jun‐Yeop Song, Hyo‐Jung Kwon, Kyung Cheol Choi, Jeong Hyun Kwon   +5 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configuration

, 2017
Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations.
Sajavaara, Timo, Timo Sajavaara, Napari, Mari, Østreng, Erik, Veselov, Alexey, Julin, Jaakko, Manu Lahtinen, Alexey Veselov, Erik Østreng, Jaakko Julin, Lahtinen, Manu, Mari Napari   +11 more
core   +1 more source

Electrical characteristics of β-Ga2O3 thin films grown by PEALD [PDF]

, 2014
In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique.
Donmez, I., Bıyıklı, Necmi, Ozgit Akgun, C., Altuntas, H.   +3 more
core   +1 more source

Atomic layer deposition for hafnium oxide-based meta-optics in the ultraviolet spectral range

Journal of the European Optical Society-Rapid Publications
Hafnium oxide (HfO2) is a high-index dielectric material of growing importance for optical coatings and meta-optical components operating from the ultraviolet (UV) to the visible spectral range.
Siefke Thomas, Gerold Kristin, Shestaeva Svetlana, Paul Pallabi, Alam Shawon, Franta Daniel, Szeghalmi Adriana, Schröder Sven, Kroker Stefanie   +8 more
doaj   +1 more source

Robust Antiferroelectric Response in the Pbca Phase of Hafnium Zirconium Oxide via Aluminum Substitution

Journal of the American Ceramic Society, Volume 109, Issue 9, September 2026.
ABSTRACT Hafnium zirconium oxide (HZO) has attracted attention for applications in nonvolatile memory and energy harvesting devices. However, it faces practical challenges such as insufficient endurance. One promising strategy to address this limitation is the utilization of antiferroelectric (AFE) behavior in HZO‐based materials. Previous studies have
Yong Kyu Choi, MinChul Kang, Tinsae Alem, Nicolas K. Lam, Andrea L. Watson, Kory Burns, Stephen J. McDonnell, Lin Zhou, Jon F. Ihlefeld   +8 more
wiley   +1 more source

Development of Multifunctional Hierarchically Restructured Antibacterial Neural Interfacing Electrodes via Plasma‐Enhanced Atomic Layer Deposition of Zinc Oxide Thin Films

Advanced Functional Materials, Volume 36, Issue 69, 27 August 2026.
ABSTRACT Next‐generation implantable neural‐interfacing devices are increasingly constrained by the coupled demands of electrode miniaturization, electrochemical performance, and implantation infection risk. Femtosecond laser–based hierarchical surface restructuring (HSR) technology has emerged as a scalable, manufacturing‐compatible platform for ...
Henna Khosla, Wesley Seche, Kriti Panchal, Steven J. May, Ekaterina Pomerantseva, Jacob Elmer, Tyler Cooper, Matthew J. Urban, Hailey Y. Maurer, Gregory A. Caputo, Jeffrey Hettinger, Shahram Amini, Gang Feng   +12 more
wiley   +1 more source

Mechanism of PEALD-Grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges

, 2013
The physical mechanism of passivation of AlGaN/GaN HEMTs by AlN thin film prepared with plasma-enhanced atomic layer deposition (PEALD) is investigated by characterizing Ni-Al2O3AlN-GaN/AlGaN/GaN metal-insulator-semiconductor (MIS) diodes. The dielectric
Tang, Zhikai, Jiang, Qimeng, Yang, Shu, Huang, Sen, Chen, Kevin J.   +4 more
core   +1 more source

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, Volume 36, Issue 70, 31 August 2026.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source