Results 91 to 100 of about 1,326 (196)
The weak interactions between powdered catalysts and their supports significantly impact the kinetics of the water electrolysis oxidation reaction. Here, we use plasma‐enhanced atomic layer deposition (PEALD) technology to directly construct amorphous ...
Ruijie Dai +6 more
doaj +1 more source
Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors
The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al2O3 ...
Shiwei Sun +5 more
doaj +1 more source
In this paper, AlNO nano-films have been deposited on an AlGaN/GaN heterojunction by alternating growth of AlN and Al2O3 using plasma enhanced atomic layer deposition (PEALD).
Dongliang Zhang +7 more
core +1 more source
In this research, we mainly increase the adhesion of PMMA substrate and film, which is reflected in the environmental test. This study used plasma-enhanced atomic layer deposition (PEALD) to find the relationship between the intensity of XRD reflection ...
Chi-Chieh Wang +4 more
doaj +1 more source
International audienceA selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence.
Rémy Gassilloud +13 more
core +1 more source
This study presents a low residual tensile stress, flexible thin film encapsulation with a 2 mm bending radius based on atomic layer deposition (ALD), specifically plasma-enhanced ALD (PEALD).
Guanran Wang +4 more
doaj +1 more source
Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B. +9 more
core +1 more source
Indium Gallium Zinc Oxide (IGZO) thin‐film transistors (TFTs) offer promising potential for next‐gen monolithic three ‐ dimensional (M3D) integrated chips due to their decent mobility, excellent electrostatic characteristics, and low‐temp processing ...
Meishan Zhang +9 more
doaj +1 more source
Atomic Layer Deposition Processes: Versatile Platforms for Engineering ZnO-Chitosan Biointerfaces. [PDF]
Moreno M +17 more
europepmc +1 more source
Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band. [PDF]
Ozyigit D +7 more
europepmc +1 more source

