Results 131 to 140 of about 1,326 (196)

Integration and electrical evaluation of WS₂ and MoS₂ fets in a 300 mm pilot line. [PDF]

Discov Electron
Schram T, Smets Q, Opdebeeck A, Ghosh S, Groven B, Kumar P, Medina HM, Cott D, deMarneffe JF, Dongre H, Kruv A, Panarella L, Pinotti LF, Morin P, Kar GS, Lockhart de la Rosa CJ.   +15 more
europepmc   +1 more source

Catalysts Design and Atomistic Reaction Modulation by Atomic Layer Deposition for Energy Conversion and Storage Applications. [PDF]

Exploration (Beijing)
Jung MJ, Razazzadeh A, Khan H, Kwon SH.
europepmc   +1 more source

Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges. [PDF]

Nanomicro Lett
Lee CH, Ryu SH, Hwang T, Kim SH, Kim YS, Park JS.   +5 more
europepmc   +1 more source

Different temperatures leakage mechanisms of (Al₂O₃)_x(HfO₂)_1-x gate Dielectrics deposited by atomic layer deposition. [PDF]

Sci Rep
Jia Y, Fu Y, Liu X, Wang Z, Jiang P, Lu Q, Wang S, Guan Y, Li L, Chen H, Hao Y.   +10 more
europepmc   +1 more source

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source

Broadband, low-noise heterojunction photodiodes enabled by simple and scalable transfer of carbon nanowalls. [PDF]

Sci Rep
Yerlanuly Y, Parkhomenko HP, Zhumadilov RY, Nemkayeva RR, Kyrykbay BA, Solovan MM, Mostovyi AI, Ramazanov TS, Gabdullin MT, Jumabekov AN, Brus VV.   +10 more
europepmc   +1 more source

Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications. [PDF]

Nanomaterials (Basel)
Park WJ, Kim HJ, Lee JH, Kim JH, Uhm SH, Kim SW, Lee HC.   +6 more
europepmc   +1 more source

Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO₂ gate dielectric through insertion of SiO₂ interlayer. [PDF]

Sci Rep
Choi CH, Kim T, Kim MJ, Kim GB, Oh JE, Jeong JK.   +5 more
europepmc   +1 more source

Solution-Processed High-k HfO₂ Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness. [PDF]

Materials (Basel)
Sairike J, Tuokedaerhan K, Sailanbek S, Cai Z, Yang H.   +4 more
europepmc   +1 more source

PEALD of a Ruthenium Adhesion Layer for Copper Interconnects

Journal of The Electrochemical Society, 2004
Ruthenium thin films were produced by plasma-enhanced atomic layer deposition (PEALD) using an alternating supply of bis(ethylcyclopentadienyl)ruthenium and plasma at a deposition temperature of 270°C. The film thickness per cycle was self-limited at 0.038 nm/cycle, which was thinner than the thickness obtained from the conventional ALD using oxygen ...
Kwon, OK, Kwon, SH, Park, HS, Kang, SW
openaire   +3 more sources