Results 141 to 150 of about 1,326 (196)

Properties of low temperature PEALD SiO2

, 2013
ALD has a relatively well-established position as a mainstream coating method in many application areas, mainly due to good film conformality and possibility of nanoscale material modification. Typically ALD deposited oxide materials, such as Al2O3, have surface hydroxyl groups after deposition, contributing to hydrophilic properties.
Putkonen, Matti, Puurunen, Riikka L., Ylivaara, Oili, Bosund, Markus, Sajavaara, Timo, Vähä-Nissi, Mika   +5 more
core   +4 more sources

Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD

ECS Meeting Abstracts, 2010
Abstract not Available.
Jiajun Mao, Eric Eisenbraun, Vincent Omarjee, Andrey Korolev, Clement Lansalot, Christian Dussarrat   +5 more
openaire   +2 more sources

Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications

Applied Optics, 2016
Structural, optical, and mechanical properties of Al2O3, SiO2, and HfO2 materials prepared by plasma-enhanced atomic layer deposition (PEALD) were investigated. Residual stress poses significant challenges for optical coatings since it may lead to mechanical failure, but in-depth understanding of these properties is still missing for PEALD coatings ...
Svetlana, Shestaeva, Astrid, Bingel, Peter, Munzert, Lilit, Ghazaryan, Christian, Patzig, Andreas, Tünnermann, Adriana, Szeghalmi   +6 more
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Fast PEALD ZnO Thin-Film Transistor Circuits

IEEE Transactions on Electron Devices, 2010
We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a faster and simpler alternative to conventional atomic layer deposition.
Tom Jackson, Devin A Mourey
exaly   +2 more sources

Al2O3 Ultra-Thin Films Deposited by PEALD for Rubidium Optically Pumped Atomic Magnetometers with On-Chip Photodiode [PDF]

Coatings, 2023
This communication shows the recipe for plasma-enhanced atomic layer deposition (PEALD) Al2O3 ultra-thin films with thicknesses below 40 nm. Al2O3 ultra-thin films were deposited by PEALD to improve the rubidium optically pumped atomic magnetometers ...
Jose H. Correia, Manuel Silva, Florival Da Cunha   +2 more
exaly   +2 more sources

Hydrogen Impacts of PEALD InGaZnO TFTs Using SiO_x Gate Insulators Deposited by PECVD and PEALD

IEEE Transactions on Electron Devices, 2020
Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO2 gate insulators synthesized via plasma-enhanced chemical vapor deposition (PECVD, device A) or PEALD (device B). The electrical performance of B devices was higher than that of device A.
Seok-Goo Jeong, Hyun-Jun Jeong, Wan-Ho Choi, KyoungRok Kim, Jin-Seong Park   +4 more
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Synthesis and PEALD evaluation of new Nickel precursors

IEEE International Interconnect Technology Conference, 2014
A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H 2 /NH 3 as a reducing agent.
Satoko Gatineau, Changhee Ko, Julien Gatineau, Clement Lansalot-Matras, Chang-Fang Hsiao   +4 more
openaire   +1 more source

(Invited) PEALD and ALE for Area Selective Deposition

ECS Meeting Abstracts, 2019
Advanced CMOS scaling relies on novel structure and design, as well as material developments, which leads to challenging integration issues. Innovation in gap filling technologies, area selective deposition (ASD) and etch processes should help in reaching this scaling specification.
Christophe Vallée, Marceline Bonvalot, Remy Gassilloud, Vincent Pesce, Ahmad Chaker, Samia Belahcen, Nicolas Posseme, Bernard Pelissier, Patrice Gonon, Ahmad Bsiesy   +9 more
openaire   +1 more source

Impact of precursors choice on characteristics of PEALD SiN for spacer applications

Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), 2013
As transistor size continues to shrink, the need for conformal spacer which is insensitive to loading condition arises. Previously we have reported improved device characteristics for transistors with PEALD SiN spacer compared to those with CVD SiN spacer.
Dina H. Triyoso, Klaus Hempel, Susanne Ohsiek, Jeff Shu, Jamie K. Schaeffer, Markus Lenski   +5 more
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Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Applied Physics Letters, 2022
We investigate the HfO2/Hg0.78Cd0.22Te interface fabricated by plasma-enhanced atomic layer deposition (PEALD) at 120 °C During the deposition of HfO2, no donor-like defects are introduced into mercury cadmium telluride. X-ray photoelectron spectroscopy and ellipsometry were used to establish the optimal process regime at 120 °C and to demonstrate how ...
D. V. Gorshkov, E. R. Zakirov, G. Yu. Sidorov, I. V. Sabinina, D. V. Marin, D. G. Ikusov, M. V. Yakushev, V. A. Golyashov, O. E. Tereshchenko   +8 more
openaire   +1 more source