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Low-temperature PEALD ZnO double-gate TFTs

2011 International Semiconductor Device Research Symposium (ISDRS), 2011
We report double-gate ZnO thin film transistors fabricated using weak reactant plasma enhanced atomic layer deposition (PEALD) with a maximum process temperature of 200˚C. When operated as bottom gate only devices the TFTs have linear region mobility of 19 cm2/V⋅s and the top gate can be used to vary the bottom-gate TFT threshold voltage by more than 2
Yuanyuan V. Li   +3 more
openaire   +1 more source

ALD assistée par plasma (PEALD)

Innovations technologiques, 2016
Cet article a pour but de montrer l’interet d’une assistance plasma dans un procede ALD. La premiere section de cet article permet d’introduire et de definir les plasmas froids ainsi que les reacteurs associes. La seconde section porte sur les avantages d’une assistance plasma dans un procede ALD.
openaire   +1 more source

Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2

Journal of the Korean Physical Society, 2009
A PEALD (plasma enhanced atomic layer deposition) system is developed and analyzed by using a uid model in 2-D ICP (inductively coupled plasma) was used as a remote plasma source on the top of an Al deposition chamber for handling 200 mm wafers. TIIP (titanium isoproxide) and TEMA-Hf (tetraethylmethyl amino hafnium) were used for deposition precursors.
Junghoon Joo, Steve. M. Rossnagel
openaire   +1 more source

Self-aligned-gate PEALD ZnO TFT circuits

2009 Device Research Conference, 2009
We report combining plasma-enhanced atomic layer deposition (PEALD) ZnO thin film transistors (TFTs) with a self-aligned-gate process to fabricate high speed circuits. Sputter deposited ZnO films have been widely studied, but there have been few reports of dense thin films and high performance devices and circuits.
Devin A. Mourey   +2 more
openaire   +1 more source

Gadolinium nitride films deposited using a PEALD based process

Journal of Crystal Growth, 2012
Abstract Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp) 3 } and remote nitrogen plasma, separated by argon pulses.
Ziwen Fang   +4 more
openaire   +1 more source

Peald-TiN Protective Coatings for Metallic Bipolar Plates of PEMFC

ECS Meeting Abstracts, 2016
Proton Exchange Membrane Fuel Cell (PEMFC) is an electrochemical device that convert the chemical energy of reactants directly to electrical energy. The water-based, acidic polymer membrane usually used as its electrolyte. Therefore, the bipolar plate, as one of the most important components in PEMFC system, is required to be high corrosion ...
Eun-Young Yun   +3 more
openaire   +1 more source

PEALD nitride films

2021
CHEN HANHONG   +2 more
openaire   +3 more sources

SELECTIVE PEALD OF OXIDE ON DIELECTRIC

2021
TOIS EVA   +6 more
openaire   +3 more sources

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