Failure Mechanism of pHEMT in Navigation LNA under UWB EMP [PDF]
Micromachines, 2022 With the development of microelectronic technology, the integration of electronic systems is increasing continuously. Electronic systems are becoming more and more sensitive to external electromagnetic environments.
Yonglong Li +5 more
doaj +2 more sources
New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications [PDF]
Micromachines, 2021 Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high ...
Mohamed Fauzi Packeer Mohamed +6 more
doaj +2 more sources
An 8–18 GHz 90° Switched T-Type Phase Shifter [PDF]
Micromachines, 2023 This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, the proposed TPS adds a compensation capacitance to greatly enhance the phase shifting capacity.
Jialong Zeng +5 more
doaj +2 more sources
Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA [PDF]
Micromachines, 2022 In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor
Qian Lin +3 more
doaj +2 more sources
Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers [PDF]
Radioengineering, 2015 Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end
J. Dobes +7 more
doaj +4 more sources
Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process [PDF]
Sensors, 2022 This paper realized a charge pump phase locked loop (CPPLL) frequency source circuit based on 0.15 μm Win GaAs pHEMT process. In this paper, an improved fully differential edge-triggered frequency discriminator (PFD) and an improved differential ...
Ranran Zhao +3 more
doaj +2 more sources
A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT [PDF]
Micromachines, 2023 To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility ...
Jiaxuan Li +5 more
doaj +2 more sources
W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function [PDF]
MicromachinesThis paper presents a W-band power amplifier monolithic microwave integrated circuit (MMIC) that is designed for high-precision millimeter-wave systems and fabricated using a 0.1 µm GaAs pHEMT process.
Seong-Hee Han, Dong-Wook Kim
doaj +2 more sources
The Design of a 1–6 GHz Broadband Double-Balanced Mixer [PDF]
Micromachines, 2023 This brief proposes a 1–6 GHz broadband double-balanced mixer. On the basis of the standard Marchand balun mixer, two techniques to enhance the performance of the mixer are proposed.
Yujun Wang +4 more
doaj +2 more sources
RF analysis of aggressively scaled pHEMTs [PDF]
30th European Solid-State Device Research Conference, 2000 No abstract ...
Asenov, A. +4 more
core +3 more sources