Results 91 to 100 of about 3,715 (198)

Microelectromechanical Systems (MEMS) Resistive Heaters as Circuit Protection Devices [PDF]

, 2013
With increased opportunities for the exploitation (i.e., reverse engineering) of vulnerable electronic components and systems, circuit protection has become a critical issue.
Coutu, Ronald A., Jr., Ostrow, Scott A.
core   +1 more source

The MMIC design of GaAs bi-phase voltage variable attenuator

Dianzi Jishu Yingyong, 2019
A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
doaj   +1 more source

Antenna Design and Implementation for the Future Space Ultra-Long Wavelength Radio Telescope [PDF]

, 2018
In radio astronomy, the Ultra-Long Wavelengths (ULW) regime of longer than 10 m (frequencies below 30 MHz), remains the last virtually unexplored window of the celestial electromagnetic spectrum.
Aminaei, Amin, Chen, Linjie, Falcke, Heino, Gurvits, Leonid I., Pourshaghaghi, Hamid Reza, Wolt, Marc Klein, Yan, Yihua   +6 more
core   +4 more sources

Upgrade of the Cold Electronics of the ATLAS HEC Calorimeter for sLHC [PDF]

, 2009
The signal amplification and summation electronics of the ATLAS Hadronic End-cap Calorimeter (HEC) is operated at the circumference of the HEC calorimeters inside the cryostats in liquid argon.
Dannheim, D, Fischer, A, Hambarzumjan, A, Oberlack, H G, Pospelov, G, Reimann, O, Rudert, A, Schacht, P   +7 more
core   +1 more source

Loss compensation in Metamaterials through embedding of active transistor based negative differential resistance circuits

, 2012
This paper presents an all-electronic approach for loss compensation in metamaterials. This is achieved by embedding active-transistors based negative differential resistance (NDR) circuits in each unit cell of the metamaterial lattice.
Auzanneau, Boardman, Chen, Craninckx, Dong, Hrabar, Jelinek, Pendry, Pendry, Popa, Ramakrishna, Sameer Sonkusale, Schurig, Shelby, Shrekenhamer, Smith, Soukoulis, Tretyakov, Veselago, Wang, Wangren Xu, Willie J. Padilla, Yuan   +22 more
core   +1 more source

Strain engineered In_xGa_1-xAs channel pHEMTs on virtual substrates: a simulation study [PDF]

, 1998
The impact of In_xAl_1-xAs strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated.
Asenov, A., Babiker, S., Barker, J.R., Beaumont, S.P., Roy, S.   +4 more
core   +1 more source

High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication

Journal of Electronic Science and Technology
In the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid, Ahmad N. Abdulfattah, Saad G. Muttlak, Mohammadreza Sadeghi, Mohamed Missous   +4 more
doaj   +1 more source

Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model [PDF]

, 2002
A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small ...
Argento, D., Costantini, A., Favre, G., Filicori, F., Paganelli, R.P., Pagani, M., Santarelli, A., Traverso, P.A., Vannini, G.   +8 more
core   +1 more source

An Ultra-Wideband Digitally Programmable Power Amplifier with Efficiency Enhancement for Cellular and Emerging Wireless Communication Standards [PDF]

, 2016
The design and measurements of a fabricated novel digitally programmable wideband power amplifier (PA) are presented. The PA is made suitable for use in all communication standards, including GSM, 3G, LTE and Femto-cells, offering a bandwidth of several ...
Albasha, Lutfi, Ben Smida, Souheil, Clifton, Chris, Jingu, Yoshikatsu, Kohama, Kazumasa, Lawrenson, Alan, Morris, Kevin, Motoyama, Hideshi   +7 more
core   +3 more sources

On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices [PDF]

, 2004
Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level ...
Filicori, F., Raffo, A., Santarelli, A., Traverso, P.A., Vannini, G.   +4 more
core   +1 more source