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IEEE Access, 2019 In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology.
Lin Yang +5 more
doaj +1 more source
Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications [PDF]
, 2005 The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
Elgaid, K. +4 more
core +1 more source
An Experiment and Detection Scheme for Cavity-based Cold Dark Matter Searches
, 2017 A resonance detection scheme and some useful ideas for cavity-based searches of light cold dark matter particles (such as axions) are presented, as an effort to aid in the on-going endeavors in this direction as well as for future experiments, especially
Bukhari, M. H. S., Shah, Z. H.
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Temperature dependence of PHEMT noise parameters
, 1996 To compute and optimize the temperature performance of low noise amplifiers requires not only the temperature coefficients of all the small signal equivalent circuit parameters at the operating bias, but also the temperature dependence of the noise parameters.
Boudiaf, Ali, Scavennec, Andre
openaire +2 more sources
Modelování nelineárních prvků vysokofrekvenčních obvodů neuronovými sítěmi [PDF]
, 2012 Katedra ...
Pospíšil, Ladislav
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A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]
Micromachines (Basel), 2023 He D +6 more
europepmc +1 more source
Thermo-mechanical analysis of GaAs devices under temperature-humidity-bias testing
, 2015 International audienceAccelerated life tests on microelectronic devices are needed to estimate their degradation under severe environment. THB (Temperature Humidity Bias) [1] at 85°C and 85%RH (relative humidity) is commonly used for reliability studies.
Adokanou, Kokou +4 more
core +3 more sources
Enhancing the Accuracy of Microwave Element Models by Artificial Neural Networks [PDF]
, 2004 In the recent PSpice programs, five types of the GaAs FET model have been implemented. However, some of them are too sophisticated and therefore very difficult to measure and identify afterwards, especially the realistic model of Parker and Skellern.
Dobes, J., Pospisil, L.
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Design of an X-band high efficiency continuous-mode power amplifier
Dianzi Jishu YingyongTo improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao +3 more
doaj +1 more source
Design High Gain PHEMT LNA for Wireless Application at 5.8 GHz [PDF]
, 2014 This research present a design of a higher gain (68.94dB) for PHEMT LNA using an inductive drain feedback technique for wireless application at 5.8GHz. The amplifier it is implemented using PHEMT FHX76LP transistor devices.
A, A. (Ahmad) +6 more
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