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Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]
Micromachines (Basel)Luo J, Fan Y, Wan J, Sun X, Liang X.
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Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]
Sensors (Basel)Kared T +4 more
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A fully integrated harmonic injection and envelope-tracking architecture to extend the linearity of RF power amplifiers under high PAPR. [PDF]
Sci RepZiraksaz F, Hassanzadeh A.
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A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application. [PDF]
Sensors (Basel)Delwar TS +4 more
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Applications of MBE grown PHEMTs
Journal of Crystal Growth, 1997In the last decade pseudomorphic high electron mobility transistors (PHEMTs) have gone from a laboratory curiosity with unique low-noise performance to a high-volume commercial product for a variety of power and low-noise applications. At Raytheon Microelectronics, we currently use several thousand 4 in PHEMT wafers per year and expect this quantity to
J.V. DiLorenzo +2 more
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Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT
physica status solidi c, 2006We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail +4 more
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2009 International Conference on Advanced Technologies for Communications, 2009
an integrated narrowband low noise amplifier in cascode topology has been developed for WLAN applications. Using WIN's 0.15µm pHEMT technology, the impedance matching, voltage gain, noise figure and 1dB compression point of the circuit are analyzed and optimized under specified power consumption. Results from the simulation under advanced design system(
null Zhang Qian +4 more
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an integrated narrowband low noise amplifier in cascode topology has been developed for WLAN applications. Using WIN's 0.15µm pHEMT technology, the impedance matching, voltage gain, noise figure and 1dB compression point of the circuit are analyzed and optimized under specified power consumption. Results from the simulation under advanced design system(
null Zhang Qian +4 more
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Prepared for GaAs PHEMT Material
Advanced Materials Research, 2012In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
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Microwave and Optical Technology Letters, 2005
AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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