Results 171 to 180 of about 3,715 (198)

Introduction to PHEMTs

1996
The development of the pseudomorphic high electron mobility transistor (PHEMT) was a result of the convergence of several factors. These factors included an interest in the behavior of quantum well structures (including superlattices) and development of the concept of modulation doping, the development of a crystal growth technique (molecular beam ...
J. V. DiLorenzo, B. D. Lauterwasser, M. Zaitlin   +2 more
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Radiation Effects in Diamond pHEMTs

ECS Transactions, 2019
Field effect transistors (FET) based on diamond have 2-dimensional hole gas (2DHG) as conduction channel. In terms of usability in harsh environment, an important aspect of diamond-based FETs is its promise of radiation hardness. Because of high binding energy of diamond, diamond transistors are predicted to be radiation hard.
Aayush Thapa, David Shahin, Aris Christou   +2 more
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Improved precision nonlinear PHEMT models

1998 Midwest Symposium on Circuits and Systems (Cat. No. 98CB36268), 2002
This paper provides a highly efficient procedure for developing precision "global" nonlinear PHEMT models. The process is shown to provide a single set of parameters which produce very good agreement between measured and modeled PHEMT I/sub d/, V/sub ds/, g/sub m/ and g/sub d/ characteristics.
D.G. Thomas, G.R. Branner, B. Huang
openaire   +1 more source

Electron drift velocity in PHEMT

2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010
The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in Al-GaAs/InGaAs Pseudomorphic High Electron Mobility Transistor is determined. The saturation drift velocity in AlGaAs/InGaAs quantum well reduces from 1.55·107 to 1.3·107 cm/sec in a temperature range from 200 to 400K.
G. I. Ayzenshtat, V. G. Bozhkov, A. Y. Yushchenko   +2 more
openaire   +1 more source

High-performance Power Phemt For Wireless Communications

27th European Microwave Conference and Exhibition, 1997
A low-cost 0.7 ?m gate power pseudoinorplhic high-electron-mobility transistor (PHEMT) process was developed. PHEMT structure, etch profile and passivation conditions were optimized to yield a device with high breakdown combined with minimal gate lag. A 2 mm PHEMT exhibits dc Idss.
Y. Tkachenko, L. Kapitan, L. Leung, D. Mitchell, D. Bartle   +4 more
openaire   +1 more source

60 GHz power amplifier using PHEMT

1992 IEEE Microwave Symposium Digest MTT-S, 2003
A millimeter wave power amplifier has been developed using a 0.15- mu m, T-gate pseudomorphic high electron mobility transistor (HEMT). It utilized a novel low-loss planar combiner. The performance obtained was 715-mW output power with more than 13-dB linear gain at 60 GHz, the highest results reported in the literature to date.
J. Goel, K.L. Tan, D.I. Stones, R.W. Chan, D.C. Streit, S. Peratoner, J. Schellenberg   +6 more
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Over-temperature noise modeling of PHEMTs

IEEE NTC,Conference Proceedings Microwave Systems Conference, 2002
A new procedure is presented for modeling the variations with temperature of the noise source coefficients related to the gate and the drain of a field effect transistor (FET). The experimental results obtained for a temperature range over -60/spl deg/C to 140/spl deg/C are compared to two recent similar studies, using a pseudomorphic HEMT.
A. Boudiaf, C. Dubon-Chevallier
openaire   +1 more source

InGaP PHEMTs for wireless power applications

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002
This paper shows that we have successfully fabricated a InGaP PHEMT device with a tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation.
E. Lan, B. Pitts, M. Mikhov, O. Hartin
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Pulse measurements quantify dispersion in PHEMTs

1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167), 2002
Pulsed-bias measurements provide the necessary information for a measurement-based model capable of predicting dynamic anomalies in PHEMT devices. The measured behaviour is separated into thermal and 'trapping' effects. After de-embedding the thermal effects, the device behaviour is found to be defined in terms of two distinct pulsed characteristics ...
A.E. Parker, D.E. Root
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Super low noise InGaP gated PHEMT

IEEE Electron Device Letters, 2002
Very high performance InGaP/InGaAs/GaAs PHEMTs will be demonstrated. The fabricated InGaP gated PHEMTs devices with 0.25 /spl times/ 160/cm/sup 2/ and 0.25 /spl times/ 300 /spl mu/m/sup 2/ of gate dimensions show 304 mA/mm and 330 mA/mm of saturation drain current at V/sub GS/ = 0 V, V/sub DS/ = 2 V, and 320 mS/mm and 302 mS/mm of extrinsic ...
H.K. Huang, Y.H. Wang, C.L. Wu, C. Wang, C.S. Chang   +4 more
openaire   +2 more sources