EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
Известия высших учебных заведений России: Радиоэлектроника, 2018 The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
doaj +1 more source
RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements [PDF]
, 2003 This paper introduces a new technique that allows us to measure the admittance conversion matrix of a two-port device,using a Nonlinear Vector Network Analyzer.This method is applied to extract the conversion matrix of a 0.2 µµµµm pHEMT,driven by a 4.8 ...
Cidronali, A. +8 more
core +1 more source
High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications
ASM Science Journal, 2022 We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY +6 more
doaj +1 more source
IEEE Access, 2019 An improved technique for the design of an unbalanced analog reflection-type on-chip vector modulator is presented. At microwave frequencies, voltage-controlled high-electron-mobility transistor (HEMT) like pseudomorphic HEMT (pHEMT) is often chosen as ...
Chen Chen +5 more
doaj +1 more source
Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]
, 2001 The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E. +3 more
core +1 more source
IEEE Access, 2019 This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee +5 more
doaj +1 more source
The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]
ITM Web of Conferences, 2019 The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis +4 more
doaj +1 more source
Millimeter-wave FET modeling based on a frequency extrapolation approach [PDF]
, 2000 An empirical distributed model, based on electromagnetic analysis and standard S-parameter measurements up to microwave frequencies, is shown to be capable of accurate small-signal predictions up to the millimeter-wave range.
Cidronali, A. +4 more
core +1 more source
Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125°C [PDF]
, 2009 The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures.
Akram, R., Dede, M., Oral, Ahmet
core +2 more sources
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors [PDF]
, 2009 A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications.
Hueting, R.J.E. +4 more
core +3 more sources