Results 51 to 60 of about 3,715 (198)
Modeling and performance of a 100-element pHEMT grid amplifier [PDF]
, 1996 A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips.
De Lisio, Michael P. +6 more
core +1 more source
A through wall doppler radar system: active textile antenna design, prototyping and experiment [PDF]
, 2013 Using garments as a platform for electronic sensing and communication systems opens up a wide range of novel and exciting applications. By carefully tailoring the antenna properties and by adopting a dedicated design strategy, a robust wearable antenna ...
Agneessens, Sam +6 more
core +1 more source
Multifunction MMIC For Miniaturized Solid State Switch Matrix [PDF]
, 2003 This paper describes a new multifunction MMIC expressly designed for a reconfiguration matrix equipment.This MMIC has been developed using a standard PHEMT process and includes two switches,a totally switchable-off amplifier and a temperature ...
Cavanna, T. +3 more
core +1 more source
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
doaj +1 more source
A 12 GHz low noise amplifier with high-gain
Dianzi Jishu Yingyong, 2022 A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
doaj +1 more source
A novel topology for a HEMT negative current mirror [PDF]
, 2000 A new solution for the implementation of a HEMT negative current source is presented. The topology can be also profitably employed as a current mirror and as an active load in high-gain MMICs voltage amplifiers.
Centurelli, F. +4 more
core +1 more source
K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes
IEEE Journal of MicrowavesIn this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose +5 more
doaj +1 more source
Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT
Frontiers in Materials, 2022 In this paper, The InxAl1-xAs graded buffer was inserted between the InAlAs buffer layer and the pseudomorphic In0.66Ga0.34As channel layer to improve material quality in channel.
Likun Ai +5 more
doaj +1 more source
Design of a Broadband Amplifier for High Speed Applications [PDF]
, 2002 This paper provides comprehensive insight into the design approach followed for an amplifier dedicated to high speed base band signals. To demonstrate the methodology, an amplifier consisting of nine PHEMT cascode cells within a distributed amplifier ...
Camargo, E. +4 more
core +1 more source
Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
doaj +1 more source