Results 61 to 70 of about 3,715 (198)

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

open access: yesApplied Sciences, 2022
This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process.
Ruihao Yin   +3 more
doaj   +1 more source

W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth [PDF]

open access: yes, 2002
Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1- µµµµm GaAs MMIC process.
Chu, Tah-Hsiung   +2 more
core   +1 more source

PHEMT transistor models for accurate CAD of MMIC amplifier

open access: yesJournal of Telecommunications and Information Technology, 2002
Accurate modeling of microwave monolithic integrated circuits (MMICs) is very desirable for the reason of high fabrication costs of GaAs circuits. Designers are trying to achieve the ``first trial success`` to lower costs and accelerate the introduction
Zbigniew Nosal
doaj   +1 more source

Stabilisation of multi‐loop amplifiers using circuit‐based two‐port models stability analysis

open access: yesIET Circuits, Devices and Systems, 2021
This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi‐loop circuits and to design the required stabilization network.
Abbas Pasdar, Masoud Meghdadi, Ali Medi
doaj   +1 more source

Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]

open access: yes, 1996
The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Asenov, A.   +6 more
core   +1 more source

Design and Simulation of a Wideband 3‐Bit Phase Shifter for 4.5–5.5 GHz Applications

open access: yesIET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
In this article, a phase shifter circuit designed for next‐generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3‐bit all‐pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values ...
Sena Taş   +2 more
wiley   +1 more source

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

open access: yesIEEE Journal of the Electron Devices Society, 2020
With the development of microelectronic technology, the reliability of devices in a complex electromagnetic environment has become one of the greatest challenges in the semiconductor industry.
Yu-Qian Liu   +5 more
doaj   +1 more source

A scalable 3–15 GHz 256‐element active phased array for ultra‐wideband multi‐functional RF sensor systems

open access: yesElectronics Letters, Volume 61, Issue 1, January/December 2025.
The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu   +3 more
wiley   +1 more source

Improvement of phemt intermodulation prediction through the accurate modelling of low-frequency dispersion effects [PDF]

open access: yes, 2005
Large-signal dynamic modelling of III-V FETs cannot be simply based on de i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level ...
Filicori, F.   +7 more
core   +1 more source

A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection

open access: yesElectronics Letters, Volume 61, Issue 1, January/December 2025.
The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley   +1 more source

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