Results 71 to 80 of about 3,715 (198)
Gate recess study for high thermal stability pHEMT devices
EPJ Web of Conferences, 2017 Gate formation is a crucial steps, especially in FET fabrication process. At this steps, the characteristics are very much influenced by the processing parameters, particularly in the processing temperature. In this paper, we report the thermal stability
Isa M. Mohamad +7 more
doaj +1 more source
Design of cryogenic 700 MHz HEMT amplifier [PDF]
, 2004 We present a way to design a high-frequency low-temperature pHEMT-based balanced amplifier. The design is based on measured cryogenic S-parameters combined with a small-signal noise model.
Hakonen, Pertti J., Roschier, Leif
core +1 more source
A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System
Electronics Letters, Volume 61, Issue 1, January/December 2025.A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
wiley +1 more source
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications
IEEE Access, 2022 This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly ...
Yi-Fan Tsao +3 more
doaj +1 more source
Self-aligned 0.12mm T-gate In.53Ga.47As/In.52Al.48As HEMT Technology Utilising a Non Annealed Ohmic Contact Strategy [PDF]
, 2003 An InGaAs/InAlAs based HEMT structure, lattice matched to an InP substrate, is presented in which drive current and transconductance has been optimized through a double-delta doping strategy.
Asenov, A. +8 more
core +1 more source
LFI 30 and 44 GHz receivers Back-End Modules [PDF]
, 2009 The 30 and 44 GHz Back End Modules (BEM) for the Planck Low Frequency Instrument are broadband receivers (20% relative bandwidth) working at room temperature.
A Mediavilla +28 more
core +2 more sources
Active quasi circulator: Comprehensive review and performance comparison
Engineering Reports, Volume 6, Issue 6, June 2024.To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan +2 more
wiley +1 more source
Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques
IEEE Access, 2023 This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li +6 more
doaj +1 more source
Effect of impact ionization in scaled pHEMTs [PDF]
, 2000 The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions.
Asenov, A. +3 more
core
Co-fabrication of planar Gunn diode and HEMT on InP substrate [PDF]
, 2014 We present the co-fabrication of planar Gunn diodes and high electron mobility transistors (HEMTs) on an Indium Phosphide (InP) substrate for the first time. Electron beam lithography (EBL) has been used extensively for the complete fabrication procedure
Cumming, David R.S. +3 more
core +1 more source