Results 201 to 210 of about 17,992 (248)

Patterned deposition by plasma enhanced spatial atomic layer deposition

Physica Status Solidi - Rapid Research Letters, 2011
AbstractAn atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in‐line process by making use of switched localized plasma sources.
Fred Roozeboom
exaly   +3 more sources

Plasma-enhanced atomic layer deposition of BaTiO3

Scripta Materialia, 2016
Abstract Among high-k thin films, perovskite BaTiO3 (BTO) is an attractive candidate due to its exceptionally high dielectric constant. In contrast to conventional atomic layer deposition (ALD), plasma-enhanced ALD (PEALD) has several advantages such as lower process temperature, improved film quality and the deposition of a wider spectrum of ...
Peter Schindler, Jihwan An, Dickson Thian   +2 more
exaly   +2 more sources

Characteristics and applications of plasma enhanced-atomic layer deposition

Thin Solid Films, 2011
Abstract Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ...
Hyungjun Kim
exaly   +2 more sources

Plasma-Enhanced Atomic Layer Deposition of Ni

Japanese Journal of Applied Physics, 2010
Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3or H2plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3plasma showed higher growth rate, lower resistivity, and lower C content than that using H2plasma.
Lee, HBR, Bang, SH, Kim, WH, Gu, GH, Lee, YK, Chung, TM, Kim, CG, Park, CG, Kim, H   +8 more
openaire   +2 more sources

Plasma-enhanced atomic layer deposition of tungsten nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016
Tungsten nitride (WN) has potential as an interconnect barrier film. Deposition of WN films with bis(tert-butylimido)bis(dimethylamido)tungsten utilizing plasma-enhanced atomic layer deposition has been investigated over a temperature range of 100–400 °C employing N2, H2/N2, and NH3 remote plasmas.
Mark J. Sowa, Yonas Yemane, Fritz B. Prinz, J Provine   +3 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition for plasmonic TiN

Nanophotonic Materials XIII, 2016
This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability.
Lauren M. Otto, Aaron T. Hammack, Shaul Aloni, D. Frank Ogletree, Deirdre L. Olynick, Scott Dhuey, Bethanie J. H. Stadler, Adam M. Schwartzberg   +7 more
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films

Chemistry of Materials, 2011
Thermal properties of various silver precursors known in the literature were evaluated in order to discover which precursor is the most suitable one for plasma-enhanced atomic layer deposition (PEALD) of silver thin films. Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) was found to be the best choice. Using Ag(fod)(PEt3)
Markku Antero Leskelä, Marianna Leena Kemell, Mikko Kalervo Ritala   +2 more
exaly   +3 more sources

Plasma-enhanced atomic layer deposition of zinc phosphate

Journal of Non-Crystalline Solids, 2016
Abstract Zinc phosphate thin films were grown by plasma-enhanced atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me 3 PO 4 ) plasma, O 2 plasma, and diethylzinc (DEZn, Et 2 Zn) exposures. The film growth was monitored by in-situ spectroscopic ellipsometry.
T. Dobbelaere, M. Minjauw, T. Ahmad, P.M. Vereecken, C. Detavernier   +4 more
openaire   +1 more source

Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015
Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known.
Triratna Muneshwar, Ken Cadien
openaire   +1 more source

Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
Abstract Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO2 films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better ...
Duo Cao, Xinhong Cheng, Tingting Jia, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu   +7 more
openaire   +1 more source