Results 221 to 230 of about 5,812,653 (293)

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

open access: yesAdvanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob   +4 more
wiley   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

open access: yesAdvanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee   +4 more
wiley   +1 more source

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies. [PDF]

open access: yesACS Appl Mater Interfaces, 2018
Faraz T   +11 more
europepmc   +1 more source

Recent Advances in Transparent Microelectrode Device Architecture and Fabrication Strategies for Biomedical Applications

open access: yesAdvanced Materials Technologies, EarlyView.
Transparent microelectrode arrays enable simultaneous optical and electrical electrophysiology with high spatiotemporal resolution, allowing multimodal observations of dynamic biological systems. Advances in materials and device architectures improve device performance by addressing key trade‐offs between optical transparency, impedance, and ...
Michael Abraham Listyawan   +6 more
wiley   +1 more source

Two‐Step Thermal Upcycling of Flexible Printed Circuit Board Waste Into Metallic Copper Nanoparticles: Synthesis and Characterization

open access: yesAdvanced Materials Technologies, EarlyView.
A two‐step thermal upcycling process converts flexible printed circuit board waste into high‐purity copper nanoparticles using polymer degradation and arc discharge. The synthesized nanoparticles exhibit controlled morphology and high metal purity.
Bikesh S. Ghinangju   +2 more
wiley   +1 more source

Conductive Tin Oxide Under the Thermal Budget of Perovskite/TOPCon Tandems: Toward Indium‐Free Contacts

open access: yesAdvanced Materials Technologies, EarlyView.
This work demonstrates that achieving conductive undoped SnOx contacts required careful tailoring of oxygen vacancy (VO) tuning and defect engineering. Controlling oxygen deposition pressure and low‐temperature annealing (300°C) optimizes defect stoichiometry and mitigates carrier scattering. This low thermal budget approach significantly enhances Hall
Paul Llontop   +13 more
wiley   +1 more source

Deterministic Transferable Planar Dielectric Mirrors for Investigating Strong Light–Matter Coupling

open access: yesAdvanced Optical Materials, EarlyView.
Transferable dielectric distributed Bragg reflectors enable the deterministic assembly of high‐quality planar microcavities while maintaining the intrinsic properties of quantum materials during fabrication. The resulting structures exhibit robust exciton‐photon coupling in monolayer WS2${\rm WS}_{2}$ from cryogenic to room temperature, establishing a ...
Atanu Patra   +4 more
wiley   +1 more source

Extrinsic Limitations of Stealthy Hyperuniform Devices

open access: yesAdvanced Optical Materials, EarlyView.
Stealthy hyperuniform devices exhibit a scattering‐free angular region whose extent follows a simple quenching equation. Experimental measurements confirm this prediction but reveal quenching efficiencies far below theoretical expectations. Multiple scattering and finite‐size effects are quantified, establishing realistic performance limits for ...
Yuhao Xu   +5 more
wiley   +1 more source

Chalcogen Alloy‐Engineered Te2Se/Si Heterojunctions for Low‐Noise Complementary Metal‐Oxide Semiconductor‐Compatible Short‐Wave Infrared Imaging

open access: yesAdvanced Optical Materials, EarlyView.
A Te2Se/Si heterojunction designed through atomistic simulations reduces oxide‐related traps, dark current, and noise compared with pure tellurium devices. This CMOS‐compatible platform enables short‐wave infrared detection and high‐contrast imaging in a 14 × 14 array, highlighting a scalable strategy for robust, low‐noise SWIR photodetectors and image
Byeongjin Park   +13 more
wiley   +1 more source

Home - About - Disclaimer - Privacy