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Plasma-enhanced atomic layer deposition of transition metal phosphates
, 2017 openaire +1 more source
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Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
Chemistry of Materials, 2011Thermal properties of various silver precursors known in the literature were evaluated in order to discover which precursor is the most suitable one for plasma-enhanced atomic layer deposition (PEALD) of silver thin films. Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) was found to be the best choice. Using Ag(fod)(PEt3)
Sajavaara Timo +7 more
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Properties of AlN grown by plasma enhanced atomic layer deposition
Applied Surface Science, 2011Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of ...
Bosund, Markus +7 more
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Patterned deposition by plasma enhanced spatial atomic layer deposition
physica status solidi (RRL) – Rapid Research Letters, 2011AbstractAn atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in‐line process by making use of switched localized plasma sources.
Poodt, P.W.G. +4 more
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Plasma-enhanced atomic layer deposition of BaTiO3
Scripta Materialia, 2016Abstract Among high-k thin films, perovskite BaTiO3 (BTO) is an attractive candidate due to its exceptionally high dielectric constant. In contrast to conventional atomic layer deposition (ALD), plasma-enhanced ALD (PEALD) has several advantages such as lower process temperature, improved film quality and the deposition of a wider spectrum of ...
Peter Schindler +4 more
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Plasma-Enhanced Atomic Layer Deposition of Ni
Japanese Journal of Applied Physics, 2010Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3or H2plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3plasma showed higher growth rate, lower resistivity, and lower C content than that using H2plasma.
Lee, HBR +8 more
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Plasma-enhanced atomic layer deposition of tungsten nitride
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016Tungsten nitride (WN) has potential as an interconnect barrier film. Deposition of WN films with bis(tert-butylimido)bis(dimethylamido)tungsten utilizing plasma-enhanced atomic layer deposition has been investigated over a temperature range of 100–400 °C employing N2, H2/N2, and NH3 remote plasmas.
Mark J. Sowa +3 more
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Plasma-enhanced atomic layer deposition for plasmonic TiN
Nanophotonic Materials XIII, 2016This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability.
Lauren M. Otto +7 more
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Plasma-enhanced atomic layer deposition of zinc phosphate
Journal of Non-Crystalline Solids, 2016Abstract Zinc phosphate thin films were grown by plasma-enhanced atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me 3 PO 4 ) plasma, O 2 plasma, and diethylzinc (DEZn, Et 2 Zn) exposures. The film growth was monitored by in-situ spectroscopic ellipsometry.
T. Dobbelaere +4 more
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