Results 241 to 250 of about 5,812,653 (293)

Thermal and plasma enhanced atomic layer deposition on powders and particles

, 2016
Rampelberg, Geert, Cremers, Véronique, Longrie, Delphine, Deduytsche, Davy, Haemers, Johan, Detavernier, Christophe   +5 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition of transition metal phosphates

, 2017
openaire   +1 more source

Patterned deposition by plasma enhanced spatial atomic layer deposition

Physica Status Solidi - Rapid Research Letters, 2011
An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma.
Fred Roozeboom, Paul Poodt
exaly   +4 more sources

Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films [PDF]

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2018
Niobium pentoxide was deposited using tBuN=Nb(NEt2)3 as niobium precursor by both thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PE-ALD) with H2O and O2 plasma as coreactants, respectively.
Jimmy Melskens, Ageeth A. Bol, Wilhelmus M. M. Kessels   +2 more
exaly   +4 more sources

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Plasma-enhanced atomic layer deposition of BaTiO3

Scripta Materialia, 2016
Abstract Among high-k thin films, perovskite BaTiO3 (BTO) is an attractive candidate due to its exceptionally high dielectric constant. In contrast to conventional atomic layer deposition (ALD), plasma-enhanced ALD (PEALD) has several advantages such as lower process temperature, improved film quality and the deposition of a wider spectrum of ...
Peter Schindler, Yongmin Kim, Dickson Thian, Jihwan An, Fritz B. Prinz   +4 more
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Ni

Japanese Journal of Applied Physics, 2010
Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3or H2plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3plasma showed higher growth rate, lower resistivity, and lower C content than that using H2plasma.
Lee, HBR, Bang, SH, Kim, WH, Gu, GH, Lee, YK, Chung, TM, Kim, CG, Park, CG, Kim, H   +8 more
openaire   +2 more sources

Plasma-enhanced atomic layer deposition of tungsten nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016
Tungsten nitride (WN) has potential as an interconnect barrier film. Deposition of WN films with bis(tert-butylimido)bis(dimethylamido)tungsten utilizing plasma-enhanced atomic layer deposition has been investigated over a temperature range of 100–400 °C employing N2, H2/N2, and NH3 remote plasmas.
Mark J. Sowa, Yonas Yemane, Fritz B. Prinz, J Provine   +3 more
openaire   +1 more source

Plasma-enhanced atomic layer deposition for plasmonic TiN

Nanophotonic Materials XIII, 2016
This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability.
Lauren M. Otto, Aaron T. Hammack, Shaul Aloni, D. Frank Ogletree, Deirdre L. Olynick, Scott Dhuey, Bethanie J. H. Stadler, Adam M. Schwartzberg   +7 more
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films

Chemistry of Materials, 2011
Thermal properties of various silver precursors known in the literature were evaluated in order to discover which precursor is the most suitable one for plasma-enhanced atomic layer deposition (PEALD) of silver thin films. Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) was found to be the best choice. Using Ag(fod)(PEt3)
Markku Leskela, Marianna Kemell, Mikko Ritala   +2 more
exaly   +3 more sources

Plasma-enhanced atomic layer deposition of zinc phosphate

Journal of Non-Crystalline Solids, 2016
Abstract Zinc phosphate thin films were grown by plasma-enhanced atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me 3 PO 4 ) plasma, O 2 plasma, and diethylzinc (DEZn, Et 2 Zn) exposures. The film growth was monitored by in-situ spectroscopic ellipsometry.
T. Dobbelaere, M. Minjauw, T. Ahmad, P.M. Vereecken, C. Detavernier   +4 more
openaire   +1 more source